4.8 Article

Furan semiconductors and their application in organic field-effect transistors

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MATERIALS TODAY NANO
卷 21, 期 -, 页码 -

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DOI: 10.1016/j.mtnano.2022.100284

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Organic semiconductor; Organic field-effect transistor; Mobility; Furan; Thiophene

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A furan ring is often incorporated into n-conjugated molecules, either by fusion with a carbon n-system or as an n-spacer, leading to significant changes in the photophysical, electrochemical, and charge transport properties. Furan semiconductors, as a emerging class of organic semiconductors, have attracted wide attention due to their remarkable features such as high solubility, photoluminescent quantum efficiency, and carrier mobility. Notably, both p-type and n-type furan semiconductors show great potential for applications in organic field-effect transistors (OFETs), with the highest mobility of 7.7 cm2/Vs achieved for a quinoidal oligofuran. In this review, we summarize the development of furan semiconductors and their applications in OFETs, providing a perspective on these materials.
A furan ring is frequently integrated into n-conjugated molecules either by fusion with a carbon n- system or as a n-spacer, which significantly alters the photophysical, electrochemical, and charge transport properties of n-conjugated molecules. As an emerging class of organic semiconductors, furan semiconductors have attracted widespread interest owing to their intriguing properties, such as high solubility, photoluminescent quantum efficiency, and carrier mobility. Impressively, both p-and n-type furan semiconductors exhibit great potential for applications in organic field-effect transistors (OFETs), the highest mobility of 7.7 cm2/Vs for a quinoidal oligofuran has been achieved. In this review, we summarize the development of furan semiconductors and their applications in OFETs and provide a perspective on these materials. (c) 2022 Elsevier Ltd. All rights reserved.

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