Perovskite-loaded plasmonic gold nanorod composites enhanced solar cell performance

As a renewable green energy, solar cells can cope with environmental pollution and the shortage of fossil energy, so they are widely concerned by the scientific community. However, although the perovskite layer has excellent light absorption capacity, its thickness is limited in terms of the morphology and carrier migration. The use of surface plasmon resonance to enhance the performance of solar devices is one of the most promising concepts at present. In this paper, gold nanorods (AuNR) water solution was introduced into perovskite active layer to formed composites and the perovskite solar cells were prepared by one-step spin coating. The results showed that compared with the control group, the maximum short-circuit current density (Jsc) increased from 21.03 mA/cm(2) of the control group to 21.6 mA/cm(2) with 2vol% AuNR solution, the filling factor (FF) increased from 78.65 to 82%, and the power conversion efficiency (PCE) increased from 18.02 to 19.46%. Plasmon resonance effect enhances light-harvesting ability of perovskite layers. It promotes the separation of excitons, resulting in the formation of more carriers, the inhibition of carrier recombination, and the improvement of quantum efficiency (EQE) and filling factor (FF). Meanwhile, the presence of appropriate moisture promotes the crystallization of the film, enhances the quality of perovskite films and inhibits the carrier recombination.

Automated summary

Solar cells are renewable green energy sources that can address environmental pollution and the scarcity of fossil fuels, making them of great interest to scientists. The use of surface plasmon resonance to enhance solar device performance is a promising concept. In this study, gold nanorods were introduced into the perovskite active layer to form composites, resulting in improved short circuit current density, filling factor, and power conversion efficiency. The plasmon resonance effect enhances the light-harvesting ability of the perovskite layer, leading to increased carrier formation and reduced carrier recombination.