Acoustically Operated Excitonic Transistor Using Poly(3-hexylthiophene)

Anorganic semiconductor, regioregular poly(3-hexylthiophene) (rrP3HT),based excitonic transistor on a piezoelectric YZ lithium niobate substrateis reported for the first time. The propagating surface acoustic wave(SAW) field ionizes the excitons, stores the charge pair in the SAWmodulated potential field in the semiconductor, and carries them forward.A long-range transport & SIM;4.7 mm at room temperature has beendemonstrated. The electrical control of the exciton flux was achievedwith SAW propagating through a dual metal-insulator-semiconductor(MIS) structure. The working of the device has been demonstrated usingwhite and green light. A threshold voltage of -20.65 V wasobserved, and the working mechanism of the proposed device has beenverified through numerical analysis using MATLAB. The potential useof the proposed device structure as an all optical device was verifiedelectrically with additional electrode terminals at the output end.

Automated summary

For the first time, an organic semiconductor, regioregular poly(3-hexylthiophene) (rrP3HT), based excitonic transistor on a piezoelectric YZ lithium niobate substrate is reported. The surface acoustic wave (SAW) field ionizes the excitons, storing the charge pair in the SAW modulated potential field in the semiconductor and carrying them forward. Long-range transport up to 4.7 mm at room temperature has been demonstrated. Exciton flux can be electrically controlled using SAW propagating through a dual metal-insulator-semiconductor (MIS) structure. The device's working mechanism has been verified through numerical analysis using MATLAB and its potential use as an all optical device has been electrically confirmed with additional electrode terminals at the output end.