4.6 Article

Structural, Optical, and Dielectric Properties of Ion-Conducting LiAlO2 Thin Films Produced by Reactive Magnetron Co-sputtering

期刊

ACS APPLIED ELECTRONIC MATERIALS
卷 5, 期 3, 页码 1566-1574

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.2c01602

关键词

LiAlO2; MIM capacitor; co-sputtering; ionic conduction; dielectric constant

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This study examines the properties of LiAlO2 thin films and compares them to Al2O3 and Li2O thin films for their potential use as ion-conducting dielectrics in metal-insulator-metal (MIM) capacitors. The reactive magnetron co-sputtering method is introduced for depositing LiAlO2, resulting in a smooth and uniform amorphous film with high transparency and a wide band gap. The incorporation of lithium ions into the alumina leads to enhanced conductivity and dielectric properties, making it a promising material for thin film capacitors with better energy storage performance and lower loss.
This study reports on the properties of LiAlO2 thin films compared to Al2O3 and Li2O thin films, considering their application as an ion-conducting dielectric in metal-insulator- metal (MIM) capacitors. The reactive magnetron co-sputtering method for the deposition of LiAlO2 is presented for the first time. This room-temperature method dedicates an amorphous LiAlO2 film with a smooth surface (Rrms 0.34 nm) and uniform morphology, which was determined by X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM) techniques. UV-vis spectroscopy points to the formation of LiAlO2 with high transparency and a wide band gap. The fabricated MIM capacitors were analyzed using impedance spectroscopy to determine the cross-plane conductivity and dielectric properties. Incorporation of lithium ions into the alumina results in an ionic conduction mechanism with a room temperature conductivity of 2.23 x 10-11 S cm-1 and activation energy of 0.69 eV consistent with the Arrhenius relation. The capacitance-frequency study for LiAlO2-based capacitors shows a stabilized behavior with a capacitance of 123.51 nF/cm2. The enhancement in the dielectric constant (k 25.76) coupled with a high band gap energy (Eg 5.49 eV) is determined. These results suggest the production of thin film capacitors with better energy storage performance and lower loss by using an ion-conducting dielectric.

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