Reduced Leakage Current and Enhanced Photovoltaic Effect in Zn- Doped BiFeO3 Thin Films

Zn-doped BiFeO3 (BFO) t h i n films with composi-tional formula BiFe1-xZnxO3(x = 0, 0.1, and 0.2) have been epitaxially grown on SrRuO3 buffered SrTiO3 substrates by pulsed laser deposition. The high-concentration Zn doping does not suppress the ferroelectric polarization of the BFO films, and the Zn-doped BFO t h i n films also show reduced leakage current and an enhanced photovoltaic effect. By optical and photoelectron spectroscopy measurements, with Zn doping, the BFO t h i n films show more oxygen vacancies and a structural evolution, and moreover, a blue-shift of optical bandgap and an increase of work function are demonstrated . The reduction of leakage current and the enhancement of photovoltaic effect are related to the variation of interfacial Schottky junctions and oxygen vacancies with doping. This study reveals systematic insights into the effects of Zn doping on the physical properties of BFO t h i n films.

Automated summary

In this study, Zn-doped BiFeO3 thin films were successfully grown on SrRuO3-buffered SrTiO3 substrates by pulsed laser deposition. The high-concentration Zn doping did not suppress the ferroelectric polarization of the films, while reducing leakage current and enhancing the photovoltaic effect. Optical and photoelectron spectroscopy measurements revealed that Zn doping increased oxygen vacancies and induced a structural evolution in the thin films, resulting in a blue-shift of the optical bandgap and an increase in the work function. The reduction of leakage current and the enhancement of photovoltaic effect were attributed to the variation of interfacial Schottky junctions and oxygen vacancies with doping. This study provides systematic insights into the effects of Zn doping on the physical properties of BiFeO3 thin films.