4.7 Article

A Bis-Stabilized Interface Strategy for Low-k Benzocyclobutene- Based Hollow Silica Nanocomposites

期刊

ACS APPLIED POLYMER MATERIALS
卷 5, 期 5, 页码 3698-3706

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsapm.3c00351

关键词

hollow silica nanoparticles; benzocyclobutene; low dielectric constant materials; organic-inorganic nanocomposites; interface

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A bis-stabilized interface strategy was developed to prepare high-performance low-dielectric benzocyclobutene (BCB)-based nanocomposites using a rational-designed and facile synthesized difunctional silane modifier. Hollow silica nanoparticles (HSNs) were efficiently surface-modified with the difunctional silane and chemically cross-linked with the BCB resin matrix, resulting in HSNs-doped organic-inorganic nanocomposites. The dielectric properties of the nanocomposites were adjusted by changing the doping ratios and cavity diameters of HSNs. The resultant 0.25 wt % HSNs-doped nanocomposites with a cavity diameter of 180 nm exhibited a significantly reduced dielectric constant of 2.12 by 20% compared to commercial BCB resin, while maintaining low dielectric loss, excellent thermal stability, and hydrophobicity. This study provides a simple and universal strategy for fabricating low-dielectric BCB nanocomposites for future high-density advanced packaging applications.
A bis-stabilized interface strategy has been proposed to prepare high-performance low-dielectric (low -k) benzocyclobutene (BCB)-based nanocomposites by a rational-designed and facile synthesized difunctional silane modifier. Hollow silica nanoparticles (HSNs) can be efficiently surface-modified with the difunctional silane to be evenly dispersed and chemically cross-linked with the BCB resin matrix during the post-thermal curing process, finally obtaining a series of HSNs-doped organic-inorganic nanocomposites. The dielectric properties of the resultant nanocomposites can be effectively adjusted by changing the doping ratios and cavity diameters of HSNs. Compared with commercial BCB resin, the dielectric constant of resultant 0.25 wt % HSNs-doped nanocomposites with a cavity diameter of 180 nm can be greatly reduced to 2.12 by 20%, maintaining the low level (10-4 at 1 kHz) of the dielectric loss, excellent thermal stability, and hydrophobicity as well. This study provides a facile and universal strategy to fabricate low -k BCB nanocomposites for future high-density advanced packaging applications.

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