Transparent p-n Junction in Cu2O/ZnS/ZnO Core-Shell Nanoarrays via In Situ Sulfuration for Enhanced Photovoltaic Stability

A Cu2O/ZnS/ZnO core-shellorderly nanoarray transparentp-n junction was prepared using a hydrothermal in situ sulfuration-sputtering method. Compared with Cu2O/ZnO, Cu2O/ZnS/ZnO exhibited a higher transmittance of similar to 85%, photovoltaic enhancement by similar to 1.2 x 10(3)-fold (a photovoltaic conversion efficiency of similar to 1.28%),and stable output during a 6 month cycle. This can be primarily attributedto the in situ dual functional ZnS transition layer,which exhibits an appropriate Fermi level and high quantum yield,thereby efficiently optimizing the carrier equilibrium while sustaininghigher transparency. Furthermore, the ZnS/ZnO core-shell nanoarrayswith a better carrier transport pathway and increased solar efficiencycan optimize the carrier kinetic equilibrium. In addition, the ZnS/ZnOnanoarrays with higher physical stability and in situ ZnS shell with higher chemical stability can efficiently increasethe photovoltaic stability.

Automated summary

A Cu2O/ZnS/ZnO core-shell orderly nanoarray transparent p-n junction was prepared through a hydrothermal in situ sulfuration-sputtering method. The Cu2O/ZnS/ZnO exhibited higher transmittance, photovoltaic enhancement, and stable output. The in situ dual functional ZnS transition layer, better carrier transport pathway, and increased physical and chemical stability of the ZnS/ZnO nanoarrays all contributed to the improved performance.