期刊
ACS APPLIED NANO MATERIALS
卷 6, 期 4, 页码 3054-3064出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsanm.2c05552
关键词
photostimulable luminescence; nonequivalent doping; trap engineering; Zn2GeO4; Mn2+; Pr3+; optical information storage
By doping nonequivalent Pr3+ to create deep traps, the photostimulable luminescence (PSL) of Zn2GeO4:Mn2+ nanophosphors is enhanced, providing superior functionality for optical signal storage.
Photostimulable luminescence (PSL) nanophosphors, which exhibit superior features including controllable energy storage and efficient photon release upon light stimulation, are desirable for optical signal storage. However, trap tuning of the storage phosphor remains a great challenge. Herein, the PSL of Zn2GeO4:Mn2+ nanophosphors is enhanced via creating deep traps through nonequivalent Pr3+ doping. The possible enhanced mechanisms are analyzed combined with doping models using the first-principles theory. A mechanism is proposed based on changing the coordination environment of Mn2+, creating deep traps and tuning the band gap structure, and thus providing the chance for electrons' photoionization and PSL generation. As a result, the prepared nanophosphors demonstrate the superior functionalities for optical signal storage. This work not only offers an insight into defect engineering through doping strategies for developing PSL materials but also supplies a good candidate for optical information storage.
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