A Novel Single Gate Controlled Nonvolatile Floating Program Gate Reconfigurable FET

Article Materials Science, Multidisciplinary

A Top-Down Platform Enabling Ge Based Reconfigurable Transistors

Raphael Boeckle et al.

Summary: Conventional FET concepts are limited by steep doping requirements, while RFETs allow dynamic device operation. Ge is seen as a promising material for reducing power consumption, but its use has been restricted to simulations and basic demonstrations.

ADVANCED MATERIALS TECHNOLOGIES (2022)

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Article Computer Science, Hardware & Architecture

Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates

Giulio Galderisi et al.

Summary: This work presents the research progress of reconfigurable field effect transistors (RFETs) and their potential applications in hardware security. By utilizing polymorphic logic gates and work function fluctuations, RFETs can achieve circuit layout camouflaging and enhance hardware security.

IEEE EMBEDDED SYSTEMS LETTERS (2022)

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Article Engineering, Electrical & Electronic

A Novel HM-HD-RFET Biosensor for Label-Free Biomolecule Detection

Arpita Biswas et al.

Summary: The research interest in developing power-efficient, low-cost, and sensitive biosensors to detect biomolecules or foreign particles that can harm humans has increased due to the global mortality caused by COVID-19. This article proposes a novel Bio-RFET biosensor with hetero-material and hetero-dielectric for biomolecular sensing. The research findings show that the proposed device exhibits higher sensitivity compared to other materials and has potential for various applications.

JOURNAL OF ELECTRONIC MATERIALS (2022)

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Article Engineering, Electrical & Electronic

Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors

Christian Roemer et al.

Summary: This paper presents a closed-form and physics-based compact model for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The model calculates the charge-carrier injection over the Schottky barriers and separates the current into field emission and thermionic emission components. The model is verified by comparing its results to measurements and TCAD simulations.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2022)

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Article Engineering, Electrical & Electronic

On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors

Bin Sun et al.

Summary: We investigated the operation modes of a dual-gate reconfigurable field-effect transistor (RFET) and compared the program gate at source (PGAS) with the more usual program gate at drain (PGAD) operation mode. We found that operating the RFET in PGAS mode yields a switching behavior close to a conventional MOSFET, but it needs to be traded off against strongly nonlinear output characteristics for small bias voltages. Our measurement results are supported by transport simulations employing a nonequilibrium Green's function approach.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

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Article Computer Science, Hardware & Architecture