A Novel Single Gate Controlled Nonvolatile Floating Program Gate Reconfigurable FET

In this work, a single gate controlled nonvolatile floating program gate (FPG) reconfigurable field effect transistor (RFET) is proposed. Different from the traditional RFET, it introduces a nonvolatile charge storage layer as an FPG instead of a program gate that needs independent power supply. The stored charge in the FPG can be programmed by the control gate (CG). Therefore, the proposed FPG-RFET essentially requires only one independently powered gate to complete the reconfigurable operation. Moreover, the CG can regulate the equivalent voltage in the FPG, which can effectively reduce the static power consumption and the generation of reverse leakage current. The physical mechanism has also been analyzed in detail.

Automated summary

The study proposes a single gate controlled nonvolatile floating program gate (FPG) reconfigurable field effect transistor (RFET). It introduces a nonvolatile charge storage layer as an FPG instead of a program gate that needs independent power supply. The stored charge in the FPG can be programmed by the control gate (CG). Therefore, only one independently powered gate is required to complete the reconfigurable operation. Moreover, the CG can regulate the equivalent voltage in the FPG, reducing static power consumption and reverse leakage current generation. The physical mechanism has also been analyzed in detail.