2D materials readiness for the transistor performance breakthrough

As the size of the transistor scales down, this strategy has confronted challenges because of the fundamental limits of silicon materials. Besides, more and more energy and time are consumed by the data transmission out of transistor computing because of the speed mismatching between the computing and memory. To meet the energy efficiency demands of big data computing, the transistor should have a smaller feature size and store data faster to overcome the energy burden of computing and data transfer. Electron transport in two-dimensional (2D) materials is constrained within a 2D plane and different materials are assembled by the van der Waals force. Owning to the atomic thickness and dangling-bond-free surface, 2D materials have demonstrated advantages in transistor scaling-down and heterogeneous structure innovation. In this review, from the performance breakthrough of 2D transistors, we discuss the opportunities, progress and challenges of 2D materials in transistor applications.

Automated summary

As the size of transistors decrease, the use of silicon material faces challenges due to its fundamental limits. Additionally, energy and time are consumed by data transmission outside of transistor computing due to speed mismatch. To meet the energy efficiency demands of big data computing, transistors need smaller feature sizes and faster data storage. Two-dimensional (2D) materials, with their atomic thickness and dangling-bond-free surface, offer advantages in transistor scaling-down and heterogeneous structure innovation. This review discusses the opportunities, progress, and challenges of 2D materials in transistor applications, starting from the performance breakthrough of 2D transistors.