Writing-Speed Dependent Thresholds of Ferroelectric Domain Switching in Monolayer α-In2Se3

An electrical-biased or mechanical-loaded scanning probe written on the ferroelectric surface can generate programmable domain nanopatterns for ultra-scaled and reconfigurable nanoscale electronics. Fabricating ferroelectric domain patterns by direct-writing as quickly as possible is highly desirable for high response rate devices. Using monolayer alpha-In2Se3 ferroelectric with approximate to 1.2 nm thickness and intrinsic out-of-plane polarization as an example, a writing-speed dependent effect on ferroelectric domain switching is discovered. The results indicate that the threshold voltages and threshold forces for domain switching can be increased from -4.2 to -5 V and from 365 to 1216 nN, respectively, as the writing-speed increases from 2.2 to 10.6 mu m s(-1). The writing-speed dependent threshold voltages can be attributed to the nucleations of reoriented ferroelectric domains, in which sufficient time is needed for subsequent domain growth. The writing-speed dependent threshold forces can be attributed to the flexoelectric effect. Furthermore, the electrical-mechanical coupling can be employed to decrease the threshold force, achieving as low as approximate to 189 +/- 41 nN, a value smaller than those of perovskite ferroelectric films. Such findings reveal a critical issue of ferroelectric domain pattern engineering that should be carefully addressed for programmable direct-writing electronics applications.

Automated summary

An electrical-biased or mechanical-loaded scanning probe can generate programmable domain nanopatterns on ferroelectric surfaces, which is important for nanoscale electronics. Using monolayer alpha-In2Se3 ferroelectric as an example, it is discovered that the writing-speed affects the threshold voltages and forces for domain switching. The findings reveal the importance of addressing ferroelectric domain pattern engineering for direct-writing electronics applications.