Raman Spectroscopic Characterization of Chemical Bonding and Phase Segregation in Tin (Sn)-Incorporated Ga2O3

Using detailed Raman scattering analyses, the effect of tin (Sn) incorporation on the crystal structure, chemical bonding/inhomogeneity, and single-phase versus multiphase formation of gallium oxide (Ga2O3) compounds is reported. The Raman characterization of the Sn-mixed Ga2O3 polycrystalline compounds (0.00 <= x <= 0.30), which were produced by the high-temperature solid-state synthesis method, indicated that the Sn-induced changes in the chemical bonding and phase segregation were significant. Furthermore, the evolution of Sn-O bonds with increasing Sn concentration (x) was confirmed. While the monoclinic beta-Ga2O3 was unperturbed for lower x values, Raman spectra revealed the nucleation of a composite with a distinct SnO2 secondary phase. A higher Sn content led to the formation of a Ga-Sn-O + SnO2 mixed phase compound, which was reflected in shifts in the high-frequency stretching and bending of the GaO4 tetrahedra that structurally formed the beta-Ga2O3 phase. Thus, a chemical composition/phase/chemical bonding correlation was established for the Sn-incorporated Ga2O3 compounds.

Automated summary

Using Raman scattering analyses, this study investigates the effect of Sn incorporation on the crystal structure, chemical bonding, and phase formation of Ga2O3 compounds. The results show that Sn-induced changes in chemical bonding and phase segregation are significant. The study also reveals the evolution of Sn-O bonds with increasing Sn concentration.