Memristive and Tunneling Effects in 3D Interconnected Silver Nanowires

A network of silver nanowires (Ag-NWs) is grown by electrodeposition in a nanoporous membrane with interconnected nanopores. This bottom-up approach fabrication method gives a conducting network with a 3D architecture and a high density of Ag-NWs. The network is then functionalized during the etching process, which leads to a high initial resistance as well as memristive behavior. The latter is expected to arise from the creation and the destruction of conducting silver filaments in the functionalized Ag-NW network. Moreover, after several cycles of measurement, the resistance of the network switches from a high resistance regime in the G omega range with tunnel conduction to a low resistance regime presenting negative differential resistance in the k omega range.

Automated summary

A network of silver nanowires with 3D architecture and high density is grown in a nanoporous membrane. The network is functionalized during the etching process, exhibiting high initial resistance and memristive behavior. After repeated measurement cycles, the network switches from high resistance with tunnel conduction to low resistance with negative differential resistance.