Enhanced terahertz nonlinear response of GaAs by the tight field confinement in a nanogap

We demonstrated that an incident terahertz peak field amplitude below 0.01 MV/cm can trigger Zener tunneling in a semi-insulating GaAs. Moreover, a transmission decrease with an extinction ratio of 60% was observed in the semi-insulating GaAs with an electric field strength of up to 46 MV/cm (maximum incident peak field of similar to 0.29 MV/cm). These experimental results were realized by taking advantage of the nonlinear effects, such as Zener tunneling, impact ionization, and metal-insulator-metal tunneling in 5 nm metallic nanogaps on the GaAs; a strong field was locally confined in the vicinity of these gaps. The 5 nm gap enabled us to lower the voltage across the gap to suppress impact ionization while allowing Zener tunneling. Simulation results indicated that the effective thickness of the semiconductor increased as a function of the gap size. The approach used in this study decreases the threshold incident electric field for nonlinear responses as well as paves the way toward ultrathin high-speed electronic devices and ultrafast light pumps.

Automated summary

We showed that a terahertz peak field amplitude below 0.01 MV/cm can initiate Zener tunneling in a semi-insulating GaAs. Furthermore, we observed a 60% decrease in transmission with an electric field strength of up to 46 MV/cm (maximum incident peak field of about 0.29 MV/cm) in the semi-insulating GaAs. These experimental results were achieved by exploiting nonlinear effects, such as Zener tunneling, impact ionization, and metal-insulator-metal tunneling in 5 nm metallic nanogaps on the GaAs, where a strong field was localized. The approach used in this study reduces the threshold incident electric field for nonlinear responses and opens pathways for ultra-thin high-speed electronic devices and ultrafast light pumps.