相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
Yiyi Yan et al.
MICROELECTRONIC ENGINEERING (2022)
Characterization of Electrical Traps Formed in Al2O3 under Various ALD Conditions
Md Mamunur Rahman et al.
MATERIALS (2020)
Thickness dependence of the physical properties of atomic-layer deposited Al2O3
Yael Etinger-Geller et al.
JOURNAL OF APPLIED PHYSICS (2019)
Electron transport mechanism through ultrathin Al2O3 films grown at low temperatures using atomic-layer deposition
Pengfei Ma et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2019)
Atomic Layer Deposition (ALD) of Metal Gates for CMOS
Chao Zhao et al.
APPLIED SCIENCES-BASEL (2019)
Poole-Frenkel Emission Saturation and Its Effects on Time-to-Failure in Ta-Ta2O5-MnO2 Capacitors
Q. F. Pan et al.
ADVANCES IN MATERIALS SCIENCE AND ENGINEERING (2019)
Gate/insulator-interfacial-dipole-controlled current conduction in Al2O3 metal-insulator-semiconductor capacitors
Satoshi Okubo et al.
JOURNAL OF APPLIED PHYSICS (2019)
Electron trapping in amorphous Al2O3
L. Sambuco Salomone et al.
JOURNAL OF APPLIED PHYSICS (2018)
Parameter extraction of gate tunneling current in metal-insulator-semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3
Hector Uribe-Vargas et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2018)
Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
Karsten Henkel et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2017)
Accurate modeling of gate tunneling currents in Metal-Insulator-Semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3 and post-metallization annealing
Joel Molina-Reyes et al.
THIN SOLID FILMS (2017)
Activation energy of negative fixed charges in thermal ALD Al2O3
S. Kuehnhold-Pospischil et al.
APPLIED PHYSICS LETTERS (2016)
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
Ee Wah Lim et al.
ELECTRONICS (2015)
A brief review of atomic layer deposition: from fundamentals to applications
Richard W. Johnson et al.
MATERIALS TODAY (2014)
A Review on Conduction Mechanisms in Dielectric Films
Fu-Chien Chiu
ADVANCES IN MATERIALS SCIENCE AND ENGINEERING (2014)
Conduction mechanisms in thin atomic layer deposited Al2O3 layers
Holger Spahr et al.
JOURNAL OF APPLIED PHYSICS (2013)
Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing
Hector Garcia et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2013)
Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
Gijs Dingemans et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2012)
Chemical and structural study of electrically passivating Al2O3/Si interfaces prepared by atomic layer deposition
Volker Naumann et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2012)
Oxygen deficiency defects in amorphous Al2O3
T. V. Perevalov et al.
JOURNAL OF APPLIED PHYSICS (2010)
High dielectric constant oxides
J Robertson
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS (2004)
分享论文
