4.6 Article

Single-Event Transient Study of 28 nm UTBB-FDSOI Technology Using Pulsed Laser Mapping

期刊

ELECTRONICS
卷 12, 期 5, 页码 -

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MDPI
DOI: 10.3390/electronics12051214

关键词

single-event transient; SET; 28 nm UTBB FDSOI; pulse broadening; pulse laser; SET mapping

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This paper investigates the pulse-broadening effect and SET-sensitive region distribution in logic circuits implemented with 28 nm UTBB FDSOI technology using the pulsed-laser mapping technique. The experiments measure the SET-induced errors and map the SET-sensitive region distribution at different clock frequencies and laser energy levels. The results show that the number of errors increases with clock frequency and energy for combinational logic circuits, and that the flip-flop SEU rate is less sensitive to clock frequency.
Single-event transient (SET)-induced soft errors are becoming a more significant threat to the reliability of electronic systems in space, especially for advanced technologies. The SET pulse width, which is vulnerable to SET propagation, is a critical parameter for developing SET mitigation techniques. This paper investigates the pulse-broadening effect in the process of SET propagation in logic circuits and the SET-sensitive region distribution in the layout using the pulsed-laser mapping technique in logic circuits implemented with 28 nm Ultra-Thin Body and BOX (UTBB) FDSOI technology. The experiments were carried out at the Naval Research Laboratory (NRL) to measure the SET-induced errors and map the SET-sensitive region distribution at various clock frequencies and laser energy levels. The results illustrate that the number of errors increases with the clock frequency and energy for combinational logic circuits and that the flip-flop SEU rate is less sensitive to clock frequency. The SET pulse-broadening effect was also observed using SET mapping for an OR gate chain at different laser energy levels. In addition, the simulation results revealed the mechanism of the SET pulse-broadening effect in an OR gate chain.

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