Heavy Ion Induced Degradation Investigation on 4H-SiC JBS Diode with Different P+ Intervals

The heavy ion radiation response and degradation of SiC junction barrier Schottky (JBS) diodes with different P+ implantation intervals (S) are studied in detail. The experimental results show that the larger the S, the faster the reverse leakage current increases, and the more serious the degradation after the experiment. TCAD simulation shows that the electric field of sensitive points directly affects the degradation rate of devices with different structures. The large transient energy introduced by the heavy ion impact can induce a local temperature increase in the device resulting in lattice damage and the introduction of defects. The reverse leakage current of the degraded device is the same at low voltage as before the experiment, and is gradually dominated by space-charge-limited-conduction (SCLC) as the voltage rises, finally showing ballistic transport characteristics at high voltage.

Automated summary

The heavy ion radiation response and degradation of SiC junction barrier Schottky (JBS) diodes with different P+ implantation intervals were investigated. It was found that the larger the implantation interval, the faster the increase of reverse leakage current and the more severe the degradation. TCAD simulation revealed that the electric field at sensitive points directly influenced the degradation rate. The introduction of transient energy by heavy ion impact resulted in local temperature increase, lattice damage, and defects introduction.