Proton-mediated reversible switching of metastable ferroelectric phases with low operation voltages

The exploration of ferroelectric phase transitions enables an in-depth understanding of ferroelectric switching and promising applications in information storage. However, controllably tuning the dynamics of ferroelectric phase transitions remains challenging owing to inaccessible hidden phases. Here, using protonic gating technology, we create a series of metastable ferroelectric phases and demonstrate their reversible transitions in layered ferroelectric alpha-In2Se3 transistors. By varying the gate bias, protons can be incrementally injected or extracted, achieving controllable tuning of the ferroelectric alpha-In2Se3 protonic dynamics across the channel and obtaining numerous intermediate phases. We unexpectedly discover that the gate tuning of alpha-In2Se3 protonation is volatile and the created phases remain polar. Their origin, revealed by first-principles calculations, is related to the formation of metastable hydrogen-stabilized alpha-In2Se3 phases. Furthermore, our approach enables ultralow gate voltage switching of different phases (below 0.4 volts). This work provides a possible avenue for accessing hidden phases in ferroelectric switching.

Automated summary

Using protonic gating technology, this study creates a series of metastable ferroelectric phases in layered alpha-In2Se3 transistors and demonstrates their reversible transitions. Protons can be incrementally injected or extracted by varying the gate bias, enabling controllable tuning of the ferroelectric alpha-In2Se3 protonic dynamics and obtaining numerous intermediate phases. The volatile gate tuning of alpha-In2Se3 protonation and the formation of metastable hydrogen-stabilized alpha-In2Se3 phases are unexpectedly discovered. Ultralow gate voltage switching of different phases is achieved, providing a possible avenue for accessing hidden phases in ferroelectric switching.