Combined HF plus MW CVD Approach for the Growth of Polycrystalline Diamond Films with Reduced Bow

A combination of two methods of chemical vapor deposition (CVD) of diamond films, microwave plasma-assisted (MW CVD) and hot filament (HF CVD), was used for the growth of 100 mu m-thick polycrystalline diamond (PCD) layers on Si substrates. The bow of HF CVD and MW CVD films showed opposite convex\concave trends; thus, the combined material allowed reducing the overall bow by a factor of 2-3. Using MW CVD for the growth of the initial 25 mu m-thick PCD layer allowed achieving much higher thermal conductivity of the combined 110 mu m-thick film at 210 W/mGreek ano teleiaK in comparison to 130 W/mGreek ano teleiaK for the 93 mu m-thick pure HF CVD film.

Automated summary

This study used a combination of two chemical vapor deposition (CVD) methods, microwave plasma-assisted (MW CVD) and hot filament (HF CVD), to grow 100 μm-thick polycrystalline diamond (PCD) films on Si substrates. The combined material reduced the overall bow by a factor of 2-3 compared to the opposite convex/concave trends of HF CVD and MW CVD films. Using MW CVD for the initial growth of a 25 μm-thick PCD layer allowed the combined film to have a much higher thermal conductivity of 210 W/mK, compared to 130 W/mK for the 93 μm-thick pure HF CVD film.