4.6 Article

Boosting efficiency of eco-friendly perovskite solar cell through optimization of novel charge transport layers

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ROYAL SOCIETY OPEN SCIENCE
卷 10, 期 6, 页码 -

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ROYAL SOC
DOI: 10.1098/rsos.230331

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perovskite solar cell; FASnI(3); carbon ETL; copper HTL; scaps-1D

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This study focuses on the analysis and improvement of FASnI(3)-based perovskite solar cells (PSCs) by using different inorganic charge transport materials. Copper-based materials and fullerene derivatives are introduced as hole and electron transport layers, respectively. The effect of these materials on various aspects of the cell's performance is studied and the reasons for low performance are identified and improved through design optimization. The best result is achieved with an efficiency of 27.26%, V-oc of 1.08 V, J(sc) of 29.5 mAcm(-2), and FF of 85.6% using ITO/CuSCN/FASnI(3)/C-60/Al structure.
Formamidinium tin triiodide (FASnI(3)) is a suitable candidate for the absorber layer in perovskite solar cells (PSC) because of its non-toxicity, narrow band gap, thermal stability and high carrier mobility. This study focuses on the analysis and improvement in the performance of FASnI(3)-based PSCs using various inorganic charge transport materials. The copper-based materials such as Cu2O, CuAlO2, CuSCN and CuSbS2 are introduced as hole transport layers due to their earth abundance, ease of manufacturing, high charge mobilities and chemical stability. Similarly, fullerene derivates (PCBM and C-60) are deployed as electron transport layers due to their mechanical strength, thermal conductivity and stability. The effect of these materials on optical absorption, quantum efficiency, energy band alignment, band offsets, electric field and recombination are studied in detail. The reasons for the low performance of the cell are identified and improved through design optimization. The PSC performance is analysed in both inverted and conventional architecture. Among all the structures, the best result is achieved through ITO/CuSCN/FASnI(3)/C-60/Al with an efficiency of 27.26%, V-oc of 1.08 V, J(sc) of 29.5 mAcm(-2) and FF of 85.6%.

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