Regrowth-free AlGaInAs MQW polarization controller integrated with a sidewall grating DFB laser

Polarization control is at the heart of high-capacity data optical communication systems, such as polarization -division multiplexers and Stokes vector modulation transmitters. Despite passive polarization control being mature, the realization of monolithically integrated polarization controllers and single longitudinal mode light sources, such as distributed-feedback (DFB) lasers, is of importance. In this research, we report an AlGaInAs multiple-quantum-well photonic integrated circuit device which can control the state of polarization of the out-put light source, consisting of a polarization mode converter (PMC), a differential phase shifter (DPS), and a sidewall grating DFB laser. We demonstrate an asymmetrical stepped-height ridge waveguide PMC to realize TE to TM polarization conversion and a symmetrical straight waveguide DPS to enable polarization rotation from approximately counterclockwise circular polarization to linear polarization. Based on the identical epitaxial layer scheme, all the PMC, DPS, and DFB lasers can be integrated monolithically using only a single step of metalorganic vapor-phase epitaxy and two steps of III-V material dry etching. For the DFB-PMC device, a high TE to TM polarization conversion efficiency (98.4%) over a wide range of DFB injection currents is reported at 1555 nm wavelength. For the DFB-PMC-DPS device, a nearly 60 degrees rotation of the Stokes vector on the Poincare sphere was obtained with a range of bias voltage from 0 to -3.0 V at a laser drive current of 170 mA.

Automated summary

In this research, an AlGaInAs multiple-quantum-well photonic integrated circuit device is reported, which can control the state of polarization of the output light source. It consists of a polarization mode converter (PMC), a differential phase shifter (DPS), and a sidewall grating DFB laser. The integration of these components was achieved using a single step of metalorganic vapor-phase epitaxy and two steps of III-V material dry etching.