100 GHz bandwidth, 1 volt integrated electro-optic Mach-Zehnder modulator at near-IR wavelengths

Integrated photonics at near-IR (NIR) wavelengths currently lacks high bandwidth and low-voltage modulators, which add electro-optic functionality to passive circuits. Here, integrated hybrid thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulators (MZM) are shown, using TFLN bonded to planarized silicon nitride waveguides. The design does not require TFLN etching or patterning. The push-pull MZM achieves a half-wave voltage length product (V pi L) of 0.8 V.cm at 784 nm. MZM devices with 0.4 cm and 0.8 cm modulation length show a broadband electro-optic response with a 3 dB bandwidth beyond 100 GHz, with the latter showing a record bandwidth to half-wave voltage ratio of 100 GHz/V and a high extinction ratio exceeding 30 dB. Such fully integrated high-performance NIR electro-optic devices may benefit data communications, analog signal processing, test and measurement instrumentation, quantum information processing and other applications. (c) 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Automated summary

This study demonstrates integrated hybrid thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulators (MZM) that utilize TFLN bonded to planarized silicon nitride waveguides. The design eliminates the need for TFLN etching or patterning. The MZM achieves a half-wave voltage length product (V pi L) of 0.8 V.cm at 784 nm. MZM devices with modulation lengths of 0.4 cm and 0.8 cm display a broadband electro-optic response, with a 3 dB bandwidth exceeding 100 GHz and a high extinction ratio exceeding 30 dB, showcasing record performance.