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J. T. Leonard et al.
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Stacia Keller et al.
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S. Zhao et al.
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Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes
Jai Verma et al.
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S. Keller et al.
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Polarization engineered 1-dimensional electron gas arrays
Digbijoy N. Nath et al.
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S. Zhao et al.
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James J. Coleman et al.
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Wei Liu et al.
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Yi-Lu Chang et al.
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Julien Renard et al.
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Mutsuo Ogura
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S. Keller et al.
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N-polar GaN/AlGaN/GaN high electron mobility transistors
Siddharth Rajan et al.
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Visible InGaN/GaN quantum-dot materials and devices
Nicolas Grandjean et al.
PROCEEDINGS OF THE IEEE (2007)
Effect of dislocations on electrical and electron transport properties of InN thin films.: II.: Density and mobility of the carriers
V. Lebedev et al.
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Catalyst-free growth of indium nitride nanorods by chemical-beam epitaxy
C. K. Chao et al.
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Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy
W. C. Ke et al.
APPLIED PHYSICS LETTERS (2006)
MBE growth optimization of InN nanowires
T Stoica et al.
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Misfit relaxation of InN quantum dots:: Effect of the GaN capping layer
JG Lozano et al.
APPLIED PHYSICS LETTERS (2006)
Low-field electron mobility in wurtzite InN
VM Polyakov et al.
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Growth of InAs/InP(001) nanostructures: The transition from quantum wires to quantum dots
HJ Parry et al.
JOURNAL OF CRYSTAL GROWTH (2005)
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Y Takasuka et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2005)
Synthesis and characterization of single-crystal indium nitride nanowires
T Tang et al.
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Surface chemical modification of InN for sensor applications
H Lu et al.
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Indium nitride quantum dots grown by metalorganic vapor phase epitaxy
O Briot et al.
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Indium nitride (InN): A review on growth, characterization, and properties
AG Bhuiyan et al.
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Surface charge accumulation of InN films grown by molecular-beam epitaxy
H Lu et al.
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High-efficiency light-emitting diodes at ≈1.3 μm using InAs-InGaAs quantum dots
A Fiore et al.
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