☆ 4.6 Article

One-Step Preparation of Si-Doped Ultra-Long β-Ga2O3 Nanowires by Low-Pressure Chemical Vapor Deposition

CRYSTALS (2023)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Physics, Applied

Single β-Ga2O3 nanowire based lateral FinFET on Si

Siyuan Xu et al.

Summary: In this study, a fin field-effect transistor (FinFET) based on a β-Ga2O3 nanowire with a diameter of approximately 60nm on a Si substrate was demonstrated. The device showed excellent performance with high on/off ratio, low leakage current, and low subthreshold swing. Simulation results were consistent with experimental measurements, and trap-related 1/f noise and 1/f^2 noise were identified through low frequency noise analysis.

APPLIED PHYSICS LETTERS (2022)

添加到收藏夹

Article Chemistry, Physical

Crystal growth and design of Sn-doped β-Ga2O3: Morphology, defect and property studies of cylindrical crystal by EFG

Bo Fu et al.

Summary: A high-quality crystalline Sn: beta-Ga2O3 crystal was successfully designed and grown using the innovative EFG method, overcoming growth challenges and studying growth morphology factors, optical properties, and carrier characteristics. Inclusions of iridium with three shapes were observed in bulk beta-Ga2O3 crystal, with corresponding surface barrier height, carrier concentration, and mobility values characterized for the crystal.

JOURNAL OF ALLOYS AND COMPOUNDS (2022)

添加到收藏夹

Article Chemistry, Physical

High-performance solar-blind photodetector arrays constructed from Sn-doped Ga2O3 microwires via patterned electrodes

Ya-Cong Lu et al.

Summary: This study demonstrates high-performance solar-blind photodetectors based on Sn-doped Ga2O3 microwires, with excellent light/dark current ratio and responsivity. A solar-blind photodetector linear array is developed using a patterned-electrodes method, producing clear solar-blind images.

NANO RESEARCH (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Single β-Ga2O3 nanowire back-gate field-effect transistor

Guangming Qu et al.

Summary: In this work, a normally-on single-monocrystal beta-Ga2O3 nanowire back-gate field-effect transistor (FET) was successfully demonstrated. The FET showed a high on/off ratio and low leakage current density. However, the on/off ratio rapidly degraded at high temperatures due to the activation of self-trapped holes and intrinsic vacancy-related defects, leading to an increase in channel leakage current.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2022)

添加到收藏夹

Article Chemistry, Analytical

Improvement of Schottky Contacts of Gallium Oxide (Ga2O3) Nanowires for UV Applications

Badriyah Alhalaili et al.

Summary: Interest in gallium oxide (Ga2O3) nanostructures for UV photodetectors has grown due to their wide bandgap semiconductor properties and potential for high power/temperature applications. This study investigated the electrical properties of Ga2O3 nanostructured films to define UV detection configurations, with factors such as metal contact distance, voltage, and transient photocurrents influencing detection performance significantly.

SENSORS (2022)

添加到收藏夹

Article Nanoscience & Nanotechnology

Defect Compensation in Nitrogen-Doped ?-Ga2O3 Nanowires: Implications for Bipolar Nanoscale Devices

Karin Yamamura et al.

Summary: This study presents detailed investigations into N-doped fi-Ga2O3 nanowires, revealing the presence of molecular N2 and N-O chemical states as well as N substitution on oxygen sites. Temperature-resolved cathodoluminescence measurements indicate an enhancement in defect-related visible bands after N doping, while their temperature variation remains the same as undoped fi-Ga2O3.

ACS APPLIED NANO MATERIALS (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

β-Ga2O3 Nanostructures: Chemical Vapor Deposition Growth Using Thermally Dewetted Au Nanoparticles as Catalyst and Characterization

Asha Yadav et al.

Summary: beta-Ga2O3 nanostructures with different morphologies, including nanowires, nanosheets, and nanorods, were successfully synthesized using thermally dewetted Au nanoparticles as catalysts. The growth of the nanostructures was found to be governed by different mechanisms, with the vapor-liquid-solid mechanism governing nanowire growth and the vapor-solid mechanism occurring in the growth of nanosheets and nanorods. The as-grown beta-Ga2O3 nanostructures exhibited high purity, wide bandgap, and strong photoluminescence emission, making them promising for applications in optoelectronic devices such as tunable UV-Vis photodetectors.

NANOMATERIALS (2022)

添加到收藏夹

Article Chemistry, Physical

Broadband Ultraviolet Self-Powered Photodetector Constructed on Exfoliated β-Ga2O3/CuI Core-Shell Microwire Heterojunction with Superior Reliability

Shan Li et al.

Summary: The paper presents a broadband ultraviolet self-powered photodetector based on a beta-Ga2O3/CuI heterostructure, demonstrating excellent performance under UVC light and remarkable stability. Insights into the intrinsic physical behaviors of the device are investigated through energy band diagrams and first principle calculations.

JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2021)

添加到收藏夹

Article Physics, Applied

Impurity band conduction in Si-doped β-Ga2O3 films

Anil Kumar Rajapitamahuni et al.

Summary: By using high-field magnetotransport measurements, this study investigates donor state energy characteristics in Si-doped β-Ga2O3 films, revealing critical insights into impurity band conduction and defect energy levels in the material.

APPLIED PHYSICS LETTERS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Effects of growth pressure on the characteristics of the β-Ga2O3 thin films deposited on (0001) sapphire substrates

Tao Zhang et al.

Summary: Beta-Ga2O3 films were grown on (0001) sapphire substrates by low-pressure MOCVD, and the effects of growth pressure on growth rate, surface morphology, and optical properties were investigated. Increasing growth pressure led to a decrease in growth rate, reduction in grain size, and smoother surface morphology, while maintaining high optical transmittance.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Morphology of Ga2O3 Nanowires and Their Sensitivity to Volatile Organic Compounds

Maciej Krawczyk et al.

Summary: Gas sensitive structures made of nanowires have large specific surface area and chemically active centers for sensitive gas sensor applications. Monoclinic beta-Ga2O3 nanowires were synthesized from metallic gallium in the presence of nitrogen and water vapor at atmospheric pressure. The gas sensor based on these nanowires shows high sensitivity to ethanol and acetone.

NANOMATERIALS (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

Revelation of Dislocations in β-Ga2O3 Substrates Grown by Edge-Defined Film-Fed Growth

Yongzhao Yao et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

Menghan Jia et al.

NANOSCALE RESEARCH LETTERS (2020)

添加到收藏夹

Article Optics

High-performance β-Ga2O3 thickness dependent solar blind photodetector

Xiaoyu Zhang et al.

OPTICS EXPRESS (2020)

添加到收藏夹

Article Chemistry, Multidisciplinary

Catalyst-Assisted Large-Area Growth of Single-Crystal beta-Ga2O3 Nanowires on Sapphire Substrates by Metal-Organic Chemical Vapor Deposition

Chunyang Jia et al.

NANOMATERIALS (2020)

添加到收藏夹

Article Chemistry, Physical

Influence of Silver as a Catalyst on the Growth of β-Ga2O3 Nanowires on GaAs

Badriyah Alhalaili et al.

MATERIALS (2020)

添加到收藏夹

Article Materials Science, Multidisciplinary

Flexible crystalline β-Ga2O3 solar-blind photodetectors

Junyu Lai et al.

JOURNAL OF MATERIALS CHEMISTRY C (2020)

添加到收藏夹

Review Physics, Multidisciplinary

Review of deep ultraviolet photodetector based on gallium oxide

Yuan Qin et al.

CHINESE PHYSICS B (2019)

添加到收藏夹

Article Materials Science, Multidisciplinary

Single-layer graphene electrode enhanced sensitivity and response speed of β-Ga2O3 solar-blind photodetector

Han Wu et al.

OPTICAL MATERIALS EXPRESS (2019)

添加到收藏夹

Article Crystallography

Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram

Hang Wang et al.

CRYSTALS (2019)

添加到收藏夹

Article Physics, Applied

High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors

B. R. Tak et al.

JOURNAL OF APPLIED PHYSICS (2019)

添加到收藏夹

Article Nanoscience & Nanotechnology

Ultrasensitive, Superhigh Signal-to-Noise Ratio, Self-Powered Solar-Blind-Photodetector Based on n-Ga2O3/p-CuSCN Core-Shell Microwire Heterojunction

Shan Li et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

添加到收藏夹

Article Materials Science, Multidisciplinary

Catalyst-Free Vapor-Solid Deposition Growth of β-Ga2O3 Nanowires for DUV Photodetector and Image Sensor Application

Chao Xie et al.

ADVANCED OPTICAL MATERIALS (2019)

添加到收藏夹

Article Chemistry, Analytical

The Growth of Ga2O3 Nanowires on Silicon for Ultraviolet Photodetector

Badriyah Alhalaili et al.

SENSORS (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

β-Ga2O3 nanorod arrays with high light-to-electron conversion for solar-blind deep ultraviolet photodetection

Shunli Wang et al.

RSC ADVANCES (2019)

添加到收藏夹

Editorial Material Physics, Condensed Matter

Bulk gallium oxide single crystal growth

Xutang Tao

JOURNAL OF SEMICONDUCTORS (2019)

添加到收藏夹

Review Physics, Multidisciplinary

Ultra-wide bandgap semiconductor of β-Ga2O3 and its research progress of deep ultraviolet transparent electrode and solar-blind photodetector

Guo Dao-You et al.

ACTA PHYSICA SINICA (2019)

添加到收藏夹

Article Chemistry, Multidisciplinary

Deep-ultraviolet photodetector based on exfoliated n-type beta-Ga2O3 nanobelt/p-Si substrate heterojunction

Gahyun Shin et al.

KOREAN JOURNAL OF CHEMICAL ENGINEERING (2018)

添加到收藏夹

Article Engineering, Electrical & Electronic

Arrays of Solar-Blind Ultraviolet Photodetector Based on β-Ga2O3 Epitaxial Thin Films

Yangke Peng et al.

IEEE PHOTONICS TECHNOLOGY LETTERS (2018)

添加到收藏夹

Review Physics, Applied

A review of Ga2O3 materials, processing, and devices

S. J. Pearton et al.

APPLIED PHYSICS REVIEWS (2018)

添加到收藏夹

Article Materials Science, Multidisciplinary

Origin of photoluminescence in ss-Ga2O3

Quoc Duy Ho et al.

PHYSICAL REVIEW B (2018)

添加到收藏夹

Article Engineering, Electrical & Electronic

Growth and Characterization of Sn Doped β-Ga2O3 Thin Films and Enhanced Performance in a Solar-Blind Photodetector

Xiaolong Zhao et al.

JOURNAL OF ELECTRONIC MATERIALS (2017)

添加到收藏夹

Article Materials Science, Multidisciplinary

Opportunities and Future Directions for Ga2O3

Michael A. Mastro et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)

添加到收藏夹

Article Materials Science, Multidisciplinary

Construction of GaN/Ga2O3 p-n junction for an extremely high responsivity self-powered UV photodetector

Peigang Li et al.

JOURNAL OF MATERIALS CHEMISTRY C (2017)

添加到收藏夹

Article Materials Science, Multidisciplinary

Ga2O3 nanowires preparation at atmospheric pressure

R. Korbutowicz et al.

MATERIALS SCIENCE-POLAND (2017)

添加到收藏夹

Article Materials Science, Ceramics

Free growth of one-dimensional β-Ga2O3 nanostructures including nanowires, nanobelts and nanosheets using a thermal evaporation method

Q. N. Abdullah et al.

CERAMICS INTERNATIONAL (2016)

添加到收藏夹

Article Materials Science, Multidisciplinary

Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology

Daoyou Guo et al.

OPTICAL MATERIALS EXPRESS (2014)

添加到收藏夹

Article Nanoscience & Nanotechnology

Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition

Ning Han et al.

NANOSCALE RESEARCH LETTERS (2014)

添加到收藏夹

Article Physics, Applied

Vertical solar-blind deep-ultraviolet schottky photodetectors based on beta-Ga2O3 substrates

Takayoshi Oshima et al.

APPLIED PHYSICS EXPRESS (2008)

添加到收藏夹

Article Materials Science, Multidisciplinary

First-principles study of the structural, electronic, and optical properties of Ga2O3 in its monoclinic and hexagonal phases

Haiying He et al.

PHYSICAL REVIEW B (2006)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.