期刊
CRYSTALS
卷 13, 期 3, 页码 -出版社
MDPI
DOI: 10.3390/cryst13030387
关键词
GaN; AlN; homoepitaxy; MOCVD; interface; diode
This paper reviews the basic issues in homoepitaxial growth of III-nitrides for vertical device technology. It focuses on using MOCVD to grow GaN and explores the effects of native substrate characteristics on material quality and device performance. The review also includes theoretical understanding of dopants in AlN and BN for future expansion into these materials.
This paper reviews some of the basic issues in homoepitaxial growth of III-nitrides to enable a vertical device technology. It focuses on the use of metal organic chemical vapor deposition (MOCVD) to grow GaN and explores the effects of the native substrate characteristics on material quality, interface composition, and device performance. A review of theoretical work understanding dopants in the ultra-wide III-nitride semiconductors, AlN and BN, is also included for future efforts expanding the technology into those materials.
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