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Vacuum-Deposited Inorganic Perovskite Light-Emitting Diodes with External Quantum Efficiency Exceeding 10% via Composition and Crystallinity Manipulation of Emission Layer under High Vacuum

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ADVANCED SCIENCE
卷 10, 期 10, 页码 -

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WILEY
DOI: 10.1002/advs.202206076

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inorganic halide perovskite; light-emitting diodes; passivation; small molecule; vacuum deposition

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Highly efficient vacuum-deposited metal halide perovskite light-emitting diodes (PeLEDs) are achieved by optimizing the stoichiometric ratio of the sublimed precursors under high vacuum and incorporating ultrathin under- and upper-layers for the perovskite emission layer (EML). The properties of the perovskite EMLs are strongly influenced by the presence and nature of the upper- and presublimed materials, leading to enhanced device performance. By eliminating Pb degrees formation and passivating defects, the PeLEDs achieve outstanding external quantum efficiencies (EQE) of 10.9% and 21.1% with and without a light out-coupling structure, respectively, surpassing the 10% EQE milestone of vacuum-deposited PeLEDs.
Although vacuum-deposited metal halide perovskite light-emitting diodes (PeLEDs) have great promise for use in large-area high-color-gamut displays, the efficiency of vacuum-sublimed PeLEDs currently lags that of solution-processed counterparts. In this study, highly efficient vacuum-deposited PeLEDs are prepared through a process of optimizing the stoichiometric ratio of the sublimed precursors under high vacuum and incorporating ultrathin under- and upper-layers for the perovskite emission layer (EML). In contrast to the situation in most vacuum-deposited organic light-emitting devices, the properties of these perovskite EMLs are highly influenced by the presence and nature of the upper- and presublimed materials, thereby allowing us to enhance the performance of the resulting devices. By eliminating Pb degrees formation and passivating defects in the perovskite EMLs, the PeLEDs achieve an outstanding external quantum efficiency (EQE) of 10.9% when applying a very smooth and flat geometry; it reaches an extraordinarily high value of 21.1% when integrating a light out-coupling structure, breaking through the 10% EQE milestone of vacuum-deposited PeLEDs.

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