☆ 4.6 Article

Cryogenic Storage Memory with High-Speed, Low-Power, and Long-Retention Performance

ADVANCED ELECTRONIC MATERIALS (2023)

Functional Applications of Future Data Storage Devices

Jia-Qin Yang et al.

Summary: The development of artificial intelligence and big data analytics is revolutionizing data processing and storage methods, requiring new computing systems to address speed and energy consumption issues. Advances in various data storage technologies have made functional computing possible, while an overview of current memory systems and their development history provides required figure of merits for applications like in-memory computing and identifies critical issues for future development.

ADVANCED ELECTRONIC MATERIALS (2021)

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Article Computer Science, Hardware & Architecture

Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K

Jae Hur et al.

Summary: In this study, the reliability effects of Hf-0.5Zr0.5O2 thin film were comprehensively characterized from 4K to 400K, showing one of the highest endurance cycles >3.5 x 10(10) among reported TiN/HZO/TiN capacitors, without wake-up/fatigue effects or retention degradation observed at 4K. Based on experimental results, simulations were further conducted to evaluate the potentials of FeRAM and FeFET as cryogenic memories.

IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS (2021)

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Review Engineering, Electrical & Electronic

Reliability of NAND Flash Arrays: A Review of What the 2-D-to-3-D Transition Meant

Christian Monzio Compagnoni et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)

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Article Nanoscience & Nanotechnology

A SONOS device with a separated charge trapping layer for improvement of charge injection

Jae-Hyuk Ahn et al.

AIP ADVANCES (2017)

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Article Engineering, Electrical & Electronic

A Novel FinFET With High-Speed and Prolonged Retention for Dynamic Memory

Dong-Il Moon et al.

IEEE ELECTRON DEVICE LETTERS (2014)

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Cryogenic Storage Memory with High-Speed, Low-Power, and Long-Retention Performance

相关参考文献

Functional Applications of Future Data Storage Devices

Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K

Reliability of NAND Flash Arrays: A Review of What the 2-D-to-3-D Transition Meant

A SONOS device with a separated charge trapping layer for improvement of charge injection

A Novel FinFET With High-Speed and Prolonged Retention for Dynamic Memory

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