Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques

Structural and electrical properties of a- and a +c-type threading dislocations in metal-organic vaporphase epitaxy-grown Si-doped GaN (0001) are determined by combining multiple scanning probe microscopy approaches. The analysis examines the space-charge region (SCR) formed around dislocation cores and clarifies the role it plays in influencing the local recombination, the surface-potential characteristic, and even the conductivity. Direct evidence of the SCR is obtained from a differential capacitance (dC/dV) measurement at dislocation sites on the (0001) surface. Experimental dC/dV (V) measurement results supported by technology computer-aided design calculations of capacitance, accounting for the theoretical deep levels related to different atom-core structures of the identified dislocations, reveal quantitative differences in their respective trap densities. This study is extended to p-n GaN vertical diodes to analyze the doping distribution across active layers. Through a correlated cross-section investigation combining electron-channeling contrast-imaging microscopy, the underlying dislocations within the depth limited by the screening of their SCRs are found to severely impact the homogeneity of the cross-section dC/dV contrast in the low-doped n-type drift layer of the diodes. This raises serious concerns regarding any quantification efforts by differential capacitance measurements in GaN on Si, where the dislocation density is in the order of 10(9) cm(-2).

Automated summary

The structural and electrical properties of a- and a+c-type threading dislocations in Si-doped GaN (0001) grown by metal-organic vaporphase epitaxy are investigated using multiple scanning probe microscopy techniques. The study reveals the influence of the space-charge region (SCR) formed around dislocation cores on local recombination, surface-potential characteristic, and conductivity. Experimental measurements supported by theoretical calculations show quantitative differences in trap densities of identified dislocations. Additionally, a cross-section investigation of p-n GaN vertical diodes demonstrates that dislocations within the depth limited by the screening of their SCRs significantly affect the homogeneity of dC/dV contrast in the low-doped n-type drift layer, raising concerns for quantification efforts in GaN on Si with high dislocation density.