Stress Relaxation and Grain Growth Behaviors of (111)-Preferred Nanotwinned Copper during Annealing

Highly (111)-oriented nanotwinned Cu (nt-Cu) films were fabricated on silicon wafers for thermal-stress characterization. We tailored the microstructural features (grain scale and orientation) of the films by tuning the electroplating parameters. The films were heat-treated and the relaxation behaviors of thermal stresses in the films were explored using a bending beam system. Focused ion beam (FIB) and electron back-scattered diffraction (EBSD) were then employed to characterize the transformations of the microstructure, grain size, and orientation degree of the films. The results indicated that the degree of (111)-preferred orientation and grain size significantly decrease with increasing the current density. The nt-Cu films with a higher degree of (111)-preferred orientation and larger grains exhibit the slower rates of stress relaxation. The film with larger grains possesses a smaller grain boundary area; thus, the grain boundary diffusion for the thermal-stress release is suppressed. In addition, the induced tensile stress in the films with larger grains is smaller leading to the difference in microstructural changes under annealing.

Automated summary

In this study, highly (111)-oriented nanotwinned Cu films were fabricated by adjusting electroplating parameters, and the relaxation behaviors of thermal stresses in the films were investigated. The results showed that the degree of (111)-preferred orientation and grain size decreased significantly with increasing current density, and films with larger grains exhibited slower rates of stress relaxation.