The Physics behind the Modulation of Thermionic Current in Photodetectors Based on Graphene Embedded between Amorphous and Crystalline Silicon

In this work, we investigate a vertically illuminated near-infrared photodetector based on a graphene layer physically embedded between a crystalline and a hydrogenated silicon layer. Under near-infrared illumination, our devices show an unforeseen increase in the thermionic current. This effect has been ascribed to the lowering of the graphene/crystalline silicon Schottky barrier as the result of an upward shift in the graphene Fermi level induced by the charge carriers released from traps localized at the graphene/amorphous silicon interface under illumination. A complex model reproducing the experimental observations has been presented and discussed. Responsivity of our devices exhibits a maximum value of 27 mA/W at 1543 nm under an optical power of 8.7 mu W, which could be further improved at lower optical power. Our findings offer new insights, highlighting at the same time a new detection mechanism which could be exploited for developing near-infrared silicon photodetectors suitable for power monitoring applications.

Automated summary

In this work, a vertically illuminated near-infrared photodetector based on graphene layer embedded between crystalline and hydrogenated silicon layers is investigated. The devices show an unexpected increase in thermionic current under near-infrared illumination, attributed to the lowering of the graphene/crystalline silicon Schottky barrier caused by an upward shift in graphene Fermi level induced by charge carriers released from traps at the graphene/amorphous silicon interface. A complex model is presented to reproduce and discuss the experimental observations. The responsivity of the devices reaches a maximum value of 27 mA/W at 1543 nm under an optical power of 8.7 mu W, indicating the potential for developing near-infrared silicon photodetectors for power monitoring applications.