期刊
NANOMATERIALS
卷 13, 期 5, 页码 -出版社
MDPI
DOI: 10.3390/nano13050871
关键词
perovskite; quantum dot; saturable absorber; photoluminescence
Saturable absorption in perovskite quantum dot (PQD) films, leading to saturation in photoluminescence (PL), is observed. The influence of excitation intensity and host-substrate on PL intensity growth is investigated using drop-casting films. PQD films are deposited on single-crystal GaAs, InP, Si wafers, and glass. The observations confirm substrate-dependent optical properties due to absorption nonlinearities in the system and can be extended for all-optical switches with a bulk semiconductor host.
Saturable absorption in perovskite quantum dot (PQD) films, leading to saturation in photoluminescence (PL), is reported. PL of drop-casting films was used to probe how excitation intensity and host-substrate influence the growth of PL intensity. The PQD films were deposited on single-crystal GaAs, InP, Si wafers and glass. Saturable absorption was confirmed through PL saturation in all films, with different excitation intensity thresholds, suggesting strong substrate-dependent optical properties, resulting from absorption nonlinearities in the system. The observations extend our former studies (Appl. Phys. Lett., 2021, 119, 19, 192103), wherein we pointed out that the PL saturation in QDs can be used to create all-optical switches in combination with a bulk semiconductor host.
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