Aluminum Nitride Ultraviolet Light-Emitting Device Excited via Carbon Nanotube Field-Emission Electron Beam

With the progress of wide bandgap semiconductors, compact solid-state light-emitting devices for the ultraviolet wavelength region are of considerable technological interest as alternatives to conventional ultraviolet lamps in recent years. Here, the potential of aluminum nitride (AlN) as an ultraviolet luminescent material was studied. An ultraviolet light-emitting device, equipped with a carbon nanotube (CNT) array as the field-emission excitation source and AlN thin film as cathodoluminescent material, was fabricated. In operation, square high-voltage pulses with a 100 Hz repetition frequency and a 10% duty ratio were applied to the anode. The output spectra reveal a dominant ultraviolet emission at 330 nm with a short-wavelength shoulder at 285 nm, which increases with the anode driving voltage. This work has explored the potential of AlN thin film as a cathodoluminescent material and provides a platform for investigating other ultrawide bandgap (UWBG) semiconductors. Furthermore, while using AlN thin film and a carbon nanotube array as electrodes, this ultraviolet cathodoluminescent device can be more compact and versatile than conventional lamps. It is anticipated to be useful in a variety of applications such as photochemistry, biotechnology and optoelectronics devices.

Automated summary

With the development of wide bandgap semiconductors, compact solid-state light-emitting devices for ultraviolet wavelength region have attracted significant technological interest as alternatives to conventional ultraviolet lamps. This study investigates the potential of aluminum nitride (AlN) as an ultraviolet luminescent material. By fabricating an ultraviolet light-emitting device with a carbon nanotube (CNT) array as the field-emission excitation source and AlN thin film as the cathodoluminescent material, the research demonstrates dominant ultraviolet emission at 330 nm. This work not only explores the potential of AlN thin film as a cathodoluminescent material but also provides a platform for investigating other ultrawide bandgap (UWBG) semiconductors. Moreover, this compact and versatile ultraviolet cathodoluminescent device holds promise for various applications such as photochemistry, biotechnology, and optoelectronic devices.