Gate controllable band alignment transition in 2D black-arsenic/WSe2 heterostructure

Review Chemistry, Multidisciplinary

Recent advances in 2D organic-inorganic heterostructures for electronics and optoelectronics

Jahangir Khan et al.

Summary: This review presents the recent progress in the field of 2D organic-inorganic heterostructures, including synthesis methods, potential applications, and challenges and opportunities.

SMARTMAT (2023)

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Review Materials Science, Multidisciplinary

Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

Jingshu Zhou et al.

Summary: The article summarizes the basic properties of several 2D materials used in photodetectors, reviews the progress in silicon photonic integrated photo-detectors based on 2D materials, and discusses the combination of some other traditional and 2D devices.

SCIENCE CHINA-MATERIALS (2022)

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Article Materials Science, Multidisciplinary

Site-controlled interlayer coupling in WSe2/2D perovskite heterostructure

Qinglin Wei et al.

Summary: Recently, it has been discovered that interlayer excitons can be robustly formed in transition metal dichalcogenides/two-dimensional perovskite heterostructures, and their performance can be enhanced by controlling the interlayer coupling. By tuning the height and diameter of pillars, the interlayer coupling can be further engineered. Additionally, the symmetry breaking of monolayer WSe2 can lead to the appearance of an additional triplet interlayer exciton and induce an anisotropic response.

SCIENCE CHINA-MATERIALS (2022)

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Review Physics, Condensed Matter

Twist-angle two-dimensional superlattices and their application in (opto)electronics

Kaiyao Xin et al.

Summary: This review introduces the development and applications of twist-angle two-dimensional systems, which exhibit novel and tunable properties due to the formation of Moire superlattice and modulated Moire bands. Band engineering by twisting allows for the adjustment of (opto)electrical behaviors and has been applied in photodetectors and superconductor electronic devices. Theoretical predictions and experimental verification are ongoing for extended twisted 2D materials such as TMDs and BPs. Twisted bilayer h-BN has been discovered to have ideal properties for dielectric and ferroelectric devices.

JOURNAL OF SEMICONDUCTORS (2022)

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Article Physics, Applied

Ultrafast-response and broad-spectrum polarization sensitive photodetector based on Bi1.85In0.15S3 nanowire

Zhangxun Mo et al.

Summary: Alloying of semiconductors is an effective strategy to broaden the photoresponse range of optoelectronic devices. In this study, Bi1.85In0.15S3 nanowire photodetectors were successfully designed and prepared, demonstrating excellent photoresponse in a wide range of wavelengths and ultrafast response speed. Moreover, the photodetectors showed sensitivity to polarization angle, indicating significant application potentials in multifunctional optoelectronics and electronics.

APPLIED PHYSICS LETTERS (2022)

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Article Materials Science, Multidisciplinary

A facile and non-destructive quartz fiber shadow mask process for the sub-micrometer device fabrication on two-dimensional semiconductors

Li-An Li et al.

RARE METALS (2022)

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Article Multidisciplinary Sciences

Miniaturized spectrometers with a tunable van der Waals junction

Hoon Hahn Yoon et al.

Summary: This study presents a high-performance computational spectrometer based on a single van der Waals junction, which achieves high accuracy and resolution using an electrically tunable transport-mediated spectral response, providing unprecedented performance for miniaturized applications.

SCIENCE (2022)

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Article Materials Science, Multidisciplinary

Self-powered bifunctional perovskite photodetectors with both broadband and narrowband photoresponse

Wenjie Cheng et al.

Summary: This study demonstrates the successful development of a bifunctional photodetector that can detect photons in both broadband and narrowband. By introducing polyvinylpyrrolidone to increase the viscosity of the perovskite precursor solution and using methylamine gas for postprocessing, the researchers achieved narrowband and broadband dual-function photodetection in a single device. This work represents an important step towards the realization of perovskite-based multifunctional integrated devices.

INFOMAT (2022)

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Review Materials Science, Multidisciplinary

Interfacial charge and energy transfer in van der Waals heterojunctions

Zehua Hu et al.

Summary: Van der Waals heterojunctions, fabricated by stacking two-dimensional materials, have shown great potential in photonics, optoelectronics, and information sciences. This review focuses on the charge and energy transfer processes in transition metal dichalcogenides (TMDCs) and other related 2D materials, and highlights the applications and future development challenges in this field.

INFOMAT (2022)

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Article Chemistry, Multidisciplinary

Near-Infrared Self-Powered Linearly Polarized Photodetection and Digital Incoherent Holography Using WSe2/ReSe2 van der Waals Heterostructure

Jongtae Ahn et al.

Summary: This study demonstrates a self-powered linear-polarization-sensitive near-infrared photodetector using a two-dimensional WSe2/ReSe2 van der Waals heterostructure, which exhibits excellent performance and enables digital incoherent holographic 3D imaging through NIR-selective linear polarization detection.

ACS NANO (2021)

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Article Chemistry, Multidisciplinary

In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic

Mianzeng Zhong et al.

Summary: This study systematically investigates the in-plane anisotropic properties of few-layered b-As, a narrow-gap semiconductor, and proposes a simple method for identifying crystal orientations. The research also reveals that the maximum mobility of electrons and holes is measured in the in-plane armchair direction.

ACS NANO (2021)

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Article Chemistry, Multidisciplinary

Self-Driven WSe2/Bi2O2Se Van der Waals Heterostructure Photodetectors with High Light On/Off Ratio and Fast Response

Peng Luo et al.

Summary: This study reports a WSe2/Bi2O2Se Van der Waals p-n heterostructure with superior performance in photodetection, showing promising potentials for high-performance self-driven photodetector applications.

ADVANCED FUNCTIONAL MATERIALS (2021)

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Article Chemistry, Multidisciplinary

Self-Driven Perovskite Narrowband Photodetectors with Tunable Spectral Responses

Jian Wang et al.

Summary: A filterless and self-driven perovskite narrowband photodetector with tunable bandgap based on defect-assisted charge collection narrowing mechanism is reported in this study, showing wide spectral response range and excellent detection performance. It has the potential for high-efficiency optoelectronic devices without external power sources.

ADVANCED MATERIALS (2021)

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Article Chemistry, Multidisciplinary

Direct Synthesis and Enhanced Rectification of Alloy-to-Alloy 2D Type-II MoS2(1-x)Se2x/SnS2(1-y)Se2y Heterostructures

Xiaoting Wang et al.

Summary: The study demonstrates the single-step growth of MoS2(1-x)Se2x/SnS2(1-y)Se2y 2D alloy-to-alloy vertical heterostructures with well-aligned heteroepitaxial relationship and optimized type-II band alignment, leading to significantly enhanced device performance in terms of electron mobility and rectification ratio.

ADVANCED MATERIALS (2021)

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Article Chemistry, Multidisciplinary

Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse

Chaoyang Tan et al.

Summary: This paper reports a broken-gap vdW heterojunction PtS2/WSe2 with bilateral accumulation region design and a large band offset, showing ultra-high rectification ratio and on/off ratio, as well as excellent photodetection properties.

ACS NANO (2021)

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Article Multidisciplinary Sciences

Rashba valleys and quantum Hall states in few-layer black arsenic

Feng Sheng et al.

Summary: In this study, synergistic effects between spin-orbit coupling and the Stark effect in centrosymmetric few-layer black arsenic are reported, leading to particle-hole asymmetric Rashba valley formation and exotic quantum Hall states controlled by electrostatic gating. These novel phenomena are rooted in the unique lattice structure and orbital symmetries of black arsenic, enabling gate-tunable manipulation of Rashba valleys for two-dimensional electronic systems with unconventional quantum Hall states.

NATURE (2021)

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Article Nanoscience & Nanotechnology

Moire trions in MoSe2/WSe2 heterobilayers

Xi Wang et al.

Summary: Researchers observed moire trions and their doping-dependent photoluminescence polarization in H-stacked MoSe2/WSe2 heterobilayers. As moire traps are filled with either electrons or holes, new sets of interlayer exciton photoluminescence peaks emerge with specific narrow linewidths. Circularly polarized photoluminescence reveals a switching polarization pattern as moire excitons transition from negatively charged to positively charged, driven by energy relaxation pathways during interlayer trion formation.

NATURE NANOTECHNOLOGY (2021)

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Article Chemistry, Multidisciplinary

Optical and electrical modulation in ultraviolet photodetectors based on organic one-dimensional photochromic arrays

Yue Geng et al.

Summary: Organic photochromic materials have attracted attention for their unique physicochemical properties in optoelectronics, but assembling large-area photochromic micro- and nanostructure arrays remains a challenge. By studying the crystallographic and electronic performance changes of organic photochromic one-dimensional arrays, tunable and repeatable responsivity of UV photochromic photodetectors can be achieved.

SMARTMAT (2021)

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Article Chemistry, Multidisciplinary

Gate-controlled ambipolar transport in b-AsP crystals and their VIS-NIF photodetection

Mianzeng Zhong et al.

Summary: Black phosphorus has excellent properties but is unstable under humid conditions, while stability can be significantly improved by arsenic doping. The black arsenic phosphorus crystals show promising potential in field effect transistors and broadband photodetectors with outstanding performance.

NANOSCALE (2021)

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Article Chemistry, Physical

Highly tunable electronic structure and linear dichroism in 90° twisted α-phosphorus carbide bilayer: a first-principles calculation

Weiwei Liu et al.

Summary: Alpha-phosphorus carbide with a 90-degree interlayer twist angle exhibits symmetric band dispersion and spatial separation of electronic states, leading to isotropic electrical transport. However, anisotropic electronic states can be reinstated by introducing out-of-plane electrostatic potential or in-plane deformation potential.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2021)

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Article Multidisciplinary Sciences

General synthesis of two-dimensional van der Waals heterostructure arrays

Jia Li et al.

NATURE (2020)

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Article Optics

Black phosphorus-based van der Waals heterostructures for mid-infrared light-emission applications

Xinrong Zong et al.

LIGHT-SCIENCE & APPLICATIONS (2020)

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Editorial Material Physics, Condensed Matter

A new single-element layered two-dimensional semiconductor: black arsenic

Mianzeng Zhong et al.

JOURNAL OF SEMICONDUCTORS (2020)

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Editorial Material Physics, Condensed Matter

Photodetectors based on 2D material/Si heterostructure

Jingshu Zhou et al.

JOURNAL OF SEMICONDUCTORS (2020)

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Article Chemistry, Multidisciplinary

A universal method for rapid and large-scale growth of layered crystals

Apoorva Chaturvedi et al.

SMARTMAT (2020)

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Article Nanoscience & Nanotechnology

Visible Phototransistors Based on Vertical Nanolayered Heterostructures of SnS/SnS2 p-n and SnSe2/SnS2 n-n Nanoflakes

He Tian et al.

ACS APPLIED NANO MATERIALS (2020)

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Article Chemistry, Physical

Enhancing hydrogen evolution on the basal plane of transition metal dichacolgenide van der Waals heterostructures

Faling Ling et al.

NPJ COMPUTATIONAL MATERIALS (2019)

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Article Nanoscience & Nanotechnology

Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe2 Heterostructure

Junhong Na et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

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Article Nanoscience & Nanotechnology

Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio

Krishna Murali et al.

ACS APPLIED MATERIALS & INTERFACES (2018)

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Article Chemistry, Multidisciplinary

Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy

Yabin Chen et al.

ADVANCED MATERIALS (2018)

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Article Chemistry, Multidisciplinary

Thickness-Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

Mianzeng Zhong et al.

ADVANCED FUNCTIONAL MATERIALS (2018)

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Article Engineering, Electrical & Electronic

Self-Powered, Highly Sensitive, High-Speed Photodetection Using ITO/WSe2/SnSe2 Vertical Heterojunction

Krishna Murali et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)

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Article Physics, Applied

2D WSe2/MoS2 van der Waals heterojunction photodiode for visible-near infrared broadband detection

Hyo Sun Lee et al.

APPLIED PHYSICS LETTERS (2018)

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Article Multidisciplinary Sciences

Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices

Zhengwei Zhang et al.

SCIENCE (2017)

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Article Chemistry, Physical

Highly polarization sensitive infrared photodetector based on black phosphorus-on-WSe2 photogate vertical heterostructure

Lei Ye et al.

NANO ENERGY (2017)

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Article Nanoscience & Nanotechnology

Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p-n vdW Heterostructure

Shengxue Yang et al.

ACS APPLIED MATERIALS & INTERFACES (2016)

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Article Chemistry, Multidisciplinary

Gate tunable WSe2-BP van der Waals heterojunction devices

Peng Chen et al.

NANOSCALE (2016)

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Review Multidisciplinary Sciences

2D materials and van der Waals heterostructures

K. S. Novoselov et al.

SCIENCE (2016)

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Article Nanoscience & Nanotechnology

Strain engineering band gap, effective mass and anisotropic Dirac-like cone in monolayer arsenene

Can Wang et al.

AIP ADVANCES (2016)

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Review Nanoscience & Nanotechnology

Van der Waals heterostructures and devices

Yuan Liu et al.

NATURE REVIEWS MATERIALS (2016)

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Article Chemistry, Multidisciplinary

Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions

Shengli Zhang et al.

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION (2015)

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Article Physics, Applied

Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene

Zhiya Zhang et al.

APPLIED PHYSICS EXPRESS (2015)

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Article Chemistry, Multidisciplinary

Excited Excitonic States in 1L, 2L, 3L, and Bulk WSe2 Observed by Resonant Raman Spectroscopy

Elena del Corro et al.

ACS NANO (2014)

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Article Engineering, Electrical & Electronic

Band-Edge Steepness Obtained From Esaki/Backward Diode Current-Voltage Characteristics

Sapan Agarwal et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2014)

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Article Multidisciplinary Sciences

Van der Waals heterostructures

A. K. Geim et al.

NATURE (2013)

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Gate controllable band alignment transition in 2D black-arsenic/WSe2 heterostructure

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