4.5 Article

Robust Excitonic-Insulating States in Cu-Substituted Ta2NiSe5

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Multidisciplinary Sciences

Promises and prospects of two-dimensional transistors

Yuan Liu et al.

Summary: The article reviews the promise and current status of 2D transistors, emphasizing the potential misestimation or misinterpretation of widely used device parameters. It suggests using more reliable methods to assess the potential of diverse 2D semiconductors and highlights key technical challenges in optimizing the performance of 2D transistors.

NATURE (2021)

Article Multidisciplinary Sciences

Direct observation of excitonic instability in Ta2NiSe5

Kwangrae Kim et al.

Summary: A potential divergence in the static excitonic susceptibility of the candidate material Ta2NiSe5 was observed using Raman spectroscopy, revealing evidence for electronically-driven phase transition.

NATURE COMMUNICATIONS (2021)

Article Physics, Multidisciplinary

Hybridization-Gap Formation and Superconductivity in the Pressure-Induced Semimetallic Phase of the Excitonic Insulator Ta2NiSe5

Kazuyuki Matsubayashi et al.

Summary: The excitonic insulator Ta2NiSe5 undergoes a first-order structural transition under pressure, leading to changes from a ripple to flat layer structure and ultimately changing the material from an almost zero-gap semiconductor to a semimetal with partial bandgap. This transition is accompanied by monoclinic distortion and is influenced by electron-lattice coupling. Superconductivity emerges around a certain pressure range, likely mediated by electron-coupled soft phonons.

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN (2021)

Article Chemistry, Multidisciplinary

Impurity-Induced Emission in Re-Doped WS2 Monolayers

Leyi Loh et al.

Summary: Impurity doping is a viable approach for improving optical response in semiconductors, but can lead to broad emissions that hinder materials engineering. In this study, a well-defined impurity-induced emission was observed in rhenium-doped monolayer WS2, with neutral impurity centers responsible for the emission. Additionally, calculations suggest that the emission is attributed to transitions between spin-split upper Re band and the valence band edge.

NANO LETTERS (2021)

Article Chemistry, Multidisciplinary

Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping

Lei Tang et al.

Summary: This study reports the in situ substitutional doping of niobium into monolayer transition metal dichalcogenides (TMDCs) with tunable concentrations during chemical vapor deposition, showing that niobium doping can modulate the electronic structure of TMDCs and improve their performance in electronic related applications.

ADVANCED FUNCTIONAL MATERIALS (2021)

Article Materials Science, Multidisciplinary

Doping-controlled transition from excitonic insulator to semimetal in Ta2NiSe5

L. Chen et al.

PHYSICAL REVIEW B (2020)

Article Physics, Applied

Breaking the Doping Limit in Silicon by Deep Impurities

Mao Wang et al.

PHYSICAL REVIEW APPLIED (2019)

Article Physics, Multidisciplinary

Electrical Tuning of the Excitonic Insulator Ground State of Ta2NiSe5

Keisuke Fukutani et al.

PHYSICAL REVIEW LETTERS (2019)

Article Materials Science, Multidisciplinary

Strong interband interaction in the excitonic insulator phase of Ta2NiSe5

Jinwon Lee et al.

PHYSICAL REVIEW B (2019)

Article Chemistry, Multidisciplinary

Pressure-induced coherent sliding-layer transition in the excitonic insulator Ta2NiSe5

Akitoshi Nakano et al.

Article Multidisciplinary Sciences

Temperature-dependent excitonic superuid plasma frequency evolution in an excitonic insulator, Ta2NiSe5

Yu-Seong Seo et al.

SCIENTIFIC REPORTS (2018)

Review Physics, Multidisciplinary

The physics of quantum materials

B. Keimer et al.

NATURE PHYSICS (2017)

Article Physics, Multidisciplinary

Photoinduced Enhancement of Excitonic Order

Yuta Murakami et al.

PHYSICAL REVIEW LETTERS (2017)

Article Multidisciplinary Sciences

Signatures of exciton condensation in a transition metal dichalcogenide

Anshul Kogar et al.

SCIENCE (2017)

Article Multidisciplinary Sciences

Zero-gap semiconductor to excitonic insulator transition in Ta2NiSe5

Y. F. Lu et al.

NATURE COMMUNICATIONS (2017)

Article Materials Science, Multidisciplinary

Giant exciton Fano resonance in quasi-one-dimensional Ta2NiSe5

T. I. Larkin et al.

PHYSICAL REVIEW B (2017)

Article Chemistry, Multidisciplinary

Layer-Confined Excitonic Insulating Phase in Ultrathin Ta2NiSe5 Crystals

So Young Kim et al.

ACS NANO (2016)

Article Materials Science, Multidisciplinary

Excitonic Bose-Einstein condensation in Ta2NiSe5 above room temperature

K. Seki et al.

PHYSICAL REVIEW B (2014)

Review Chemistry, Multidisciplinary

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

Manish Chhowalla et al.

NATURE CHEMISTRY (2013)

Article Materials Science, Multidisciplinary

Orthorhombic-to-monoclinic phase transition of Ta2NiSe5 induced by the Bose-Einstein condensation of excitons

T. Kaneko et al.

PHYSICAL REVIEW B (2013)

Article Physics, Multidisciplinary

Evidence for an excitonic insulator phase in 1T-TiSe2

H. Cercellier et al.

PHYSICAL REVIEW LETTERS (2007)

Article Chemistry, Physical

The rise of graphene

A. K. Geim et al.

NATURE MATERIALS (2007)

Article Materials Science, Multidisciplinary

Possibility of an excitonic insulator at the semiconductor-semimetal transition

Franz X. Bronold et al.

PHYSICAL REVIEW B (2006)

Article Chemistry, Physical

Effect of substitution for Ni by Co and/or Cu on the thermoelectric properties of half-Heusler ZrNiSn

S Katsuyama et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2004)

Article Physics, Condensed Matter

Intrinsic limitations to the doping of wide-gap semiconductors

W Walukiewicz

PHYSICA B-CONDENSED MATTER (2001)

Article Physics, Condensed Matter

Exciton condensation in an intermediate valence compound: TmSe0.45Te0.55

P Wachter

SOLID STATE COMMUNICATIONS (2001)