相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Reassessment of the intrinsic bulk recombination in crystalline silicon
T. Niewelt et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2022)
Effective charge dynamics in Al2O3/SiO2 multilayer stacks and their influence on silicon surface passivation
Hemangi Patel et al.
APPLIED SURFACE SCIENCE (2022)
Status and perspectives of crystalline silicon photovoltaics in research and industry
Christophe Ballif et al.
NATURE REVIEWS MATERIALS (2022)
Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses
Armin Richter et al.
NATURE ENERGY (2021)
Detailed loss analysis of 24.8% large-area screen-printed n-type solar cell with polysilicon passivating contact
Peiting Zheng et al.
CELL REPORTS PHYSICAL SCIENCE (2021)
Influence of layer thickness on passivation properties in SiOx/Al2O3 stacks
Anton Ek et al.
JOURNAL OF APPLIED PHYSICS (2020)
Passivated emitter and rear cell-Devices, technology, and modeling
Ralf Preu et al.
APPLIED PHYSICS REVIEWS (2020)
Low-Temperature Fabrication (≤150 °C) of High-Quality Sputtered Silicon Oxide Thin Film with Hydrogen Plasma Treatment
Taewon Seo et al.
ACS APPLIED ELECTRONIC MATERIALS (2020)
Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
Tahsin Faraz et al.
PLASMA SOURCES SCIENCE & TECHNOLOGY (2019)
Control of dipole properties in high-k and SiO2 stacks on Si substrates with tricolor superstructure
Yasushi Hotta et al.
APPLIED PHYSICS LETTERS (2018)
Taking monocrystalline silicon to the ultimate lifetime limit
T. Niewelt et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2018)
Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells
Felix Haase et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2018)
Dielectric surface passivation for silicon solar cells: A review
Ruy S. Bonilla et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2017)
n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation
Armin Richter et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2017)
Design of Al2O3/SiO2 laminated stacks with multiple interface dipole layers to achieve large flatband voltage shifts of MOS capacitors
Hironobu Kamata et al.
APPLIED PHYSICS LETTERS (2017)
Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon
Nicholas E. Grant et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2016)
Properties of the c-Si/Al2O3 interface of ultrathin atomic layer deposited Al2O3 layers capped by SiNx for c-Si surface passivation
D. Schuldis et al.
APPLIED PHYSICS LETTERS (2014)
Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3
Armin Richter et al.
APPLIED PHYSICS LETTERS (2014)
Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
Frank Feldmann et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2014)
Effects of Annealing and Atomic Hydrogen Treatment on Aluminum Oxide Passivation Layers for Crystalline Silicon Solar Cells
Junpei Irikawa et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
The effect of light soaking on crystalline silicon surface passivation by atomic layer deposited Al2O3
Baochen Liao et al.
JOURNAL OF APPLIED PHYSICS (2013)
Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
G. Dingemans et al.
JOURNAL OF APPLIED PHYSICS (2012)
Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
Gijs Dingemans et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2012)
Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
A. Descoeudres et al.
APPLIED PHYSICS LETTERS (2011)
Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
G. Dingemans et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2011)
Electronic and chemical properties of the c-Si/Al2O3 interface
Florian Werner et al.
JOURNAL OF APPLIED PHYSICS (2011)
Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
H. B. Profijt et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2011)
Minority carrier lifetime imaging of silicon wafers calibrated by quasi-steady-state photoluminescence
J. A. Giesecke et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2011)
Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
G. Dingemans et al.
APPLIED PHYSICS LETTERS (2010)
Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide
Pierre Saint-Cast et al.
APPLIED PHYSICS LETTERS (2009)
Origin of electric dipoles formed at high-k/SiO2 interface
Koji Kita et al.
APPLIED PHYSICS LETTERS (2009)
On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
B. Hoex et al.
JOURNAL OF APPLIED PHYSICS (2008)
Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing
PP Altermatt et al.
JOURNAL OF APPLIED PHYSICS (2003)
Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells
S Dauwe et al.
PROGRESS IN PHOTOVOLTAICS (2002)
Depletion of charge produced during plasma exposure in aluminum oxide by vacuum ultraviolet radiation
C Cismaru et al.
APPLIED PHYSICS LETTERS (2000)
分享论文
