High-Resolution Multicolor Patterning of InP Quantum Dot Films by Atomic Layer Deposition of ZnO

This paper presents the high-resolution(>2000 PPI) multicolorpatterning of InP quantum dot films using a conventional photolithographyprocess with a positive photoresist (PR). The solvent resistance ofthe quantum dot (QD) film is achieved by depositing an ultrathin ZnOlayer through atomic layer deposition. This is different from previousstudies, which lack high-resolution patterning or compatibility withindium phosphide (InP) QDs owing to chemical weaknesses. By employinga positive PR with a photoacid generator, the side-by-side patterningprocess yields multicolor patterns of red- and green-colored InP-basedQDs. Additionally, the stacking of each color QD film is achieved.The patterning process can be used to fabricate QD light-emittingdiode devices without degrading their performance. This process canbe used not only for thin (<100 nm) QD films, which are used inQD-LED devices, but also for thick (>1 & mu;m) QD films, whichcanbe used in the color-conversion layer with a backlight.

Automated summary

This paper presents the high-resolution multicolor patterning of InP quantum dot films using conventional photolithography with a positive photoresist. The solvent resistance of the quantum dot film is achieved by depositing an ultrathin ZnO layer through atomic layer deposition. The patterning process allows for the fabrication of multicolor patterns and stacking of each color quantum dot film.