Modeling and Simulation Investigation of Ferroelectric-Based Electrostatic Doping for Tunnelling Field-Effect Transistor

In this paper, a novel ferroelectric-based electrostatic doping (Fe-ED) nanosheet tunneling field-effect transistor (TFET) is proposed and analyzed using technology computer-aided design (TCAD) Sentaurus simulation software. By inserting a ferroelectric film into the polarity gate, the electrons and holes are induced in an intrinsic silicon film to create the p-source and the n-drain regions, respectively. Device performance is largely independent of the chemical doping profile, potentially freeing it from issues related to abrupt junctions, dopant variability, and solid solubility. An improved ON-state current and I-ON/I-OFF ratio have been demonstrated in a 3D-calibrated simulation, and the Fe-ED NSTFET's on-state current has increased significantly. According to our study, Fe-ED can be used in versatile reconfigurable nanoscale transistors as well as highly integrated circuits as an effective doping strategy.

Automated summary

In this paper, a novel ferroelectric-based electrostatic doping (Fe-ED) nanosheet tunneling field-effect transistor (TFET) is proposed, which induces electrons and holes in an intrinsic silicon film by inserting a ferroelectric film into the polarity gate to create the p-source and n-drain regions. The device performance is independent of the chemical doping profile, eliminating issues related to abrupt junctions, dopant variability, and solid solubility. Simulation results show an improved ON-state current and I-ON/I-OFF ratio, with a significant increase in the on-state current of Fe-ED NSTFET. The study suggests that Fe-ED can be an effective doping strategy for versatile reconfigurable nanoscale transistors and highly integrated circuits.