Room-Temperature CMOS Monolithic Resonant Triple-Band Terahertz Thermal Detector

Multiband terahertz (THz) detectors show great application potential in imaging, spectroscopy, and sensing fields. Thermal detectors have become a promising choice because they could sense THz radiations on the whole spectrum. This paper demonstrates the operation principle, module designs with in-depth theoretical analysis, and experimental validation of a room-temperature CMOS monolithic resonant triple-band THz thermal detector. The detector, which consists of a compact triple-band octagonal ring antenna and a sensitive proportional to absolute temperature (PTAT) sensor, has virtues of room-temperature operation, low cost, easy integration, and mass production. Good experimental results are obtained at 0.91 THz, 2.58 THz, and 4.2 THz with maximum responsivities of 32.6 V/W, 43.2 V/W, and 40 V/W, respectively, as well as NEPs of 1.28 mu W/Hz(0.5), 2.19 mu W/Hz(0.5), and 2.37 mu W/Hz(0.5), respectively, providing great potential for multiband THz sensing and imaging systems.

Automated summary

This paper presents the operation principle, module designs, theoretical analysis, and experimental validation of a room-temperature CMOS monolithic resonant triple-band THz thermal detector. The detector consists of a compact triple-band octagonal ring antenna and a sensitive PTAT sensor, showing advantages of room-temperature operation, low cost, easy integration, and mass production. Good experimental results are obtained, providing great potential for multiband THz sensing and imaging systems.