Electron Beam Induced Current Study of Photocurrent Gain in κ-Ga2O3 Schottky Diodes

The kappa-Ga2O3 polytype is attracting attention because of its high spontaneous electric polarization, which exceeds that of III-Nitrides. However, little is known of its transport and photoconductive properties. The electron beam induced current gain effect in Schottky barriers prepared on thick films of kappa-Ga2O3 has been studied. It is shown that the gain originates in the depletion region of the Schottky barrier. It is demonstrated that the induced current gain takes place only in some local regions, several which increases with applied bias. Such unusual behavior can be explained by an inhomogeneous distribution of hole traps or by a formation of conductive channels under applied bias.

Automated summary

The kappa-Ga2O3 polytype has a high spontaneous electric polarization and its transport and photoconductive properties are investigated. The electron beam induced current gain effect in Schottky barriers on thick films of kappa-Ga2O3 is studied. The gain is shown to occur in the depletion region of the Schottky barrier and is only present in some specific regions.