Structural, Optical and Electrical Properties of Undoped, Doped LaPO4 and Cu/Sn-LaPO4/N-Si Type Schottky Barrier Diode

The Cu/Sn-LaPO4/n-Si MIS Schottky barrier diode (SBD) with a 10% Sn doping has been successfully fabricated, and their photodiode properties were investigated. The I-V forward and reverse bias curves determine the photodiode parameters such as barrier height, ideality factor, and saturation currents from the thermionic emission theory. The results of the experiments with 10% Sn-LaPO4 SBDs showed a linear decrease in the ideality factor (n) up to 2.31 and 1.74, respectively, with a small increase in the effective barrier height (phi(B)) of 0.744 and 0.806 eV in dark and light conditions these results signify their use in optoelectronic industries.

Automated summary

In this study, a Cu/Sn-LaPO4/n-Si MIS Schottky barrier diode with 10% Sn doping was successfully fabricated and its photodiode properties were investigated. The photodiode parameters, such as barrier height, ideality factor, and saturation currents, were determined from the I-V forward and reverse bias curves using the thermionic emission theory. The experimental results of the 10% Sn-LaPO4 SBDs showed a linear decrease in the ideality factor (n) to 2.31 and 1.74, respectively, with a small increase in the effective barrier height (phi(B)) of 0.744 and 0.806 eV in dark and light conditions, indicating their potential use in optoelectronic industries.