Precise Calculation of the Optical Constants of Self-standing Nanoporous Silicon Layers

The precise knowledge of the values of the optical constants (index of refraction, n, and extinction coefficient, k) for nanostructured porous silicon (nanoPS) is a necessary condition to predict the behavior of any optical and photonic devices based on this material. With this objective in mind, a simulation computational program based on the matrix method was used to determine the values of the optical constants in the visible range of self-standing nanoPS films from their experimental reflectance and transmittance spectra. Furthermore, the spectral absorption coefficient (alpha) was determined from the spectral k values, which motivated to the determination of the values and type of bandgap (direct or indirect) for different porosities.

Automated summary

The precise knowledge of the optical constants (n and k) of nanostructured porous silicon (nanoPS) is essential for predicting the behavior of optical and photonic devices based on this material. A simulation computational program based on the matrix method was used to determine the optical constants of self-standing nanoPS films in the visible range using experimental reflectance and transmittance spectra. Additionally, the spectral absorption coefficient (alpha) and the type of bandgap (direct or indirect) for different porosities were determined based on the spectral k values.