4.4 Article

Electron-beam lithography of nanostructures at the tips of scanning probe cantilevers

期刊

AIP ADVANCES
卷 13, 期 3, 页码 -

出版社

AIP Publishing
DOI: 10.1063/5.0127665

关键词

-

向作者/读者索取更多资源

We have developed a process to fabricate nanoscale metallic gate electrodes on scanning probe cantilevers, including on the irregular surface of protruding cantilever tips. Gate definition is achieved through a lift-off process and an etching process. This method allows the patterning of nanoscale devices on fragile scanning probes, extending their functionality as sensors.
We developed a process to fabricate nanoscale metallic gate electrodes on scanning probe cantilevers, including on the irregular surface of protruding cantilever tips. The process includes a floating-layer technique to coat the cantilevers in an electron-beam resist. We demonstrate gate definition through a lift-off process and through an etching process. The cantilevers maintain a high force sensitivity after undergoing the patterning process. Our method allows the patterning of nanoscale devices on fragile scanning probes, extending their functionality as sensors.(c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据