Suppression of substrate temperature in DC magnetron sputtering deposition by magnetic mirror-type magnetron cathode

Magnetron sputtering generally increases the temperature of the substrate placed to face the sputtering target above 40 C-? because the plasmas are transported through unbalanced magnetic field lines from the sputtering target to the substrate surface. However, by using a magnetic mirror-type magnetron cathode, we were able to suppress the temperature of the substrate temperature to the environmental temperature of less than 40 C-? at a target-substrate distance of >= 50 mm with a DC input power of 030 W and an Ar gas pressure of 00.15 Pa. This was possible because the balanced magnetic field lines confined the plasmas near the sputtering target. By enabling film deposition on low heat-resistant substrates, this deposition technique for suppressing the substrate temperature may have uses in various application fields.

Automated summary

By using a magnetic mirror-type magnetron cathode, the temperature of the substrate can be controlled below the environmental temperature of less than 40°C in magnetron sputtering, allowing film deposition on low heat-resistant substrates.