Probing the Cr3+ luminescence sensitization in & beta;-Ga2O3 with ion-beam-induced luminescence and thermoluminescence

Ion-beam-induced luminescence (IBIL) measurements were performed in Cr-doped & beta;-Ga2O3 using both protons and helium ions, showing a strong enhancement of the Cr3+ luminescence upon ion irradiation. Theoretical modelling of the IBIL intensity curves as a function of the fluence allowed estimating the effective cross-sections associated with the defect-induced IBIL enhancement and quenching processes. The results suggest that sensitizing the Cr3+ luminescence is more efficient for H+ than for He+ irradiation. Thermoluminescence (TL) studies were performed in the pristine sample, with no TL signal being observed in the spectral region corresponding to the Cr3+ emission. In agreement with the IBIL study, upon ion irradiation (with either protons or helium ions), this TL emission is activated. Moreover, it can be quenched by annealing at 923 K for 10 s, thus revealing the role played by the defects induced by the irradiation. These results show that the irradiation-induced defects play a major role in the activation of the Cr3+ luminescence, a fact that can be exploited for radiation sensing and dosimetry.

Automated summary

Ion-beam-induced luminescence (IBIL) measurements were performed in Cr-doped β-Ga2O3, showing a strong enhancement of the Cr3+ luminescence upon ion irradiation. The effective cross-sections associated with the defect-induced IBIL enhancement and quenching processes were estimated through theoretical modelling. Thermoluminescence (TL) studies revealed that the TL emission corresponding to the Cr3+ luminescence can be activated by ion irradiation and quenched by annealing, suggesting the role of irradiation-induced defects.