In this study, the electronic, optical, and elastic characteristics of the GaxIn1 - xPySbzAs1 - y - z alloy lattice matched to the GaSb substrate were calculated using a pseudo-potential formalism based on the virtual crystal approximation. The sensitivity of these properties to pressure was considered and the results were compared with experimental evidence. The findings suggest that the pentanary GaxIn1 - xPySbzAs1 - y - z alloy under high pressure could enable novel device applications.
The electronic, optical, and elastic characteristics of the GaxIn1 - xPySbzAs1 - y - z alloy lattice matched to the GaSb substrate using a pseudo-potential formalism (EPM) based on the virtual crystal approximation (VCA) are performed. The mechanical features, acoustic velocity, and phonon frequencies of the GaxIn1 - xPySbzAs1 - y - z/GaSb system are calculated. The sensitivity of these properties to pressure is considered. Our findings are reasonably consistent with the experimental evidence that is currently available. The studied properties of this alloy under the influence of pressure are a new achievement. Novel device applications would be made possible by the pentanary GaxIn1 - xPySbzAs1 - y - z alloy under high pressure.
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