☆ 4.6 Article

The Impact of Electron Phonon Scattering, Finite Size and Lateral Electric Field on Transport Properties of Topological Insulators: A First Principles Quantum Transport Study

MATERIALS (2023)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Engineering, Electrical & Electronic

The impact of electron phonon scattering on transport properties of topological insulators: A first principles quantum transport study

Elaheh Akhoundi et al.

Summary: We used first-principles calculations and non-equilibrium Green's function to study carrier transport in the edges of topological insulator ribbons. We investigated the effects of electron-phonon interactions on the edge state transport. We found that electron-phonon scattering can lead to the destruction of dissipationless transport in topological insulators with small bulk gaps, but the transport can still be achieved if restricted to the protected states.

SOLID-STATE ELECTRONICS (2023)

添加到收藏夹

Article Materials Science, Multidisciplinary

Unprotected edge modes in quantum spin Hall insulator candidate materials

Nguyen Minh Nguyen et al.

Summary: Experiments on HgTe/CdTe and InAs/GaSb heterostructures, which are potential candidates for quantum spin Hall insulators, reveal the existence of additional edge states besides the topologically protected helical edge modes. Using first-principles calculations, an effective tight-binding model is derived for these materials, showing that the additional edge states are sensitive to edge termination. These states originate from a minimal model supporting flat bands with nontrivial quantum geometry and give rise to polarization charges at the edges.

PHYSICAL REVIEW B (2023)

添加到收藏夹

Article Physics, Applied

Optimizing topological switching in confined 2D-Xene nanoribbons via finite-size effects

Muhammad Nadeem et al.

Summary: By employing a gate-induced topological quantum phase transition, edge state transport in a topological insulator material can be controlled. This study suggests that zigzag-Xene nanoribbons are promising materials for topological electronics, displaying unique physical characteristics related to intrinsic band topology and finite-size effects on gate-induced topological switching.

APPLIED PHYSICS REVIEWS (2022)

添加到收藏夹

Article Materials Science, Multidisciplinary

Interplay of quantum spin Hall effect and spontaneous time-reversal symmetry breaking in electron-hole bilayers. I. Transport properties

Tania Paul et al.

Summary: This study investigates the band-inverted electron-hole bilayers in InAs/GaSb and demonstrates the time-reversal symmetry broken phase caused by Coulomb interactions. The transport properties in this phase are consistent with recent experimental observations. Additionally, a quantum transport study on a Corbino disk reveals unambiguous transport signatures of the broken phase.

PHYSICAL REVIEW B (2022)

添加到收藏夹

Article Materials Science, Multidisciplinary

Breakdown of topological protection due to nonmagnetic edge disorder in two-dimensional materials in the quantum spin Hall phase

Leandro R. F. Lima et al.

Summary: We study the suppression of conductance quantization in quantum spin Hall systems due to electronic interactions and edge disorder. Our results reveal the interplay between electronic localized states and electron-electron interactions, leading to the breaking of time-reversal symmetry and topological protection of edge states in 2D topological systems. We find that edge disorder causes small deviations in perfect quantized conductance in short samples and strong suppression in long samples.

PHYSICAL REVIEW B (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Advanced DFT-NEGF Transport Techniques for Novel 2-D Material and Device Exploration Including HfS2/WSe2 van der Waals Heterojunction TFET and WTe2/WS2 Metal/Semiconductor Contact

A. Afzalian et al.

Summary: This paper presents advanced density functional theory and nonequilibrium Green's function techniques implemented in ATOMOS for exploring transport in novel materials and devices, particularly in van der Waals heterojunction transistors. The methodologies used include plane-wave DFT, Wannierization, and linear combination of atomic orbital DFT to create orthogonal and nonorthogonal NEGF models, with a focus on electron-phonon scattering within a nonorthogonal framework. Applications of these methods include exploration of novel 2-D materials and devices, such as dynamically doped FETs and vdW tunneling field-effect transistors.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

Disorder effects of vacancies on the electronic transport properties of realistic topological insulator nanoribbons: The case of bismuthene

Armando Pezo et al.

Summary: The study found that in narrow nanoribbons, even small vacancy concentrations can lead to the breakdown of topological protection; while in wide nanoribbons, topological protection is more robust, but moderate structural disorder can still break it down.

PHYSICAL REVIEW MATERIALS (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

Aryan Afzalian

Summary: By utilizing accurate dissipative DFT-NEGF atomistic simulation techniques and exploring alternative materials, high-performance CMOS applications at sub-10nm scaling can be achieved. The concept of dynamically doped field-effect transistor addresses the challenge of doping in ultra-scaled devices and 2D materials.

NPJ 2D MATERIALS AND APPLICATIONS (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Phase transition and topological transistors based on monolayer Na3Bi nanoribbons

Bowen Shi et al.

Summary: The research shows that the width of ML Na3Bi nanoribbons significantly affects their properties, with extremely narrow nanoribbons opening a bandgap due to the quantum confinement effect and transitioning into a topological insulator under external electric field, exhibiting excellent conductivity.

NANOSCALE (2021)

添加到收藏夹

Article Multidisciplinary Sciences

Tuneable quantum spin Hall states in confined 1T' transition metal dichalcogenides

Biswapriyo Das et al.

SCIENTIFIC REPORTS (2020)

添加到收藏夹

Article Materials Science, Multidisciplinary

Dual topological insulator device with disorder robustness

Bruno Focassio et al.

PHYSICAL REVIEW B (2020)

添加到收藏夹

Article Materials Science, Multidisciplinary

Conductance of quantum spin Hall edge states from first principles: The critical role of magnetic impurities and inter-edge scattering

Luca Vannucci et al.

PHYSICAL REVIEW B (2020)

添加到收藏夹

Article Physics, Multidisciplinary

Quantized Field-Effect Tunneling between Topological Edge or Interface States

Yong Xu et al.

PHYSICAL REVIEW LETTERS (2019)

添加到收藏夹

Article Materials Science, Multidisciplinary

Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects

Sabyasachi Tiwari et al.

2D MATERIALS (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study

Aryan Afzalian et al.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)

添加到收藏夹

Article Physics, Condensed Matter

Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations

A. Afzalian et al.

JOURNAL OF PHYSICS-CONDENSED MATTER (2018)

添加到收藏夹

Article Multidisciplinary Sciences

Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal

Sanfeng Wu et al.

SCIENCE (2018)

添加到收藏夹

Article Multidisciplinary Sciences

Electric-field-tuned topological phase transition in ultrathin Na3Bi

James L. Collins et al.

NATURE (2018)

添加到收藏夹

Article Chemistry, Physical

Buckled two-dimensional Xene sheets

Alessandro Molle et al.

NATURE MATERIALS (2017)

添加到收藏夹

Article Multidisciplinary Sciences

Imperfect two-dimensional topological insulator field-effect transistors

William G. Vandenberghe et al.

NATURE COMMUNICATIONS (2017)

添加到收藏夹

Article Physics, Applied

Density functional theory based simulations of silicon nanowire field effect transistors

Mincheol Shin et al.

JOURNAL OF APPLIED PHYSICS (2016)

添加到收藏夹

Article Physics, Multidisciplinary

Colloquium: Topological band theory

A. Bansil et al.

REVIEWS OF MODERN PHYSICS (2016)

添加到收藏夹

Article Physics, Applied

Calculation of room temperature conductivity and mobility in tin-based topological insulator nanoribbons

William G. Vandenberghe et al.

JOURNAL OF APPLIED PHYSICS (2014)

添加到收藏夹

Article Materials Science, Multidisciplinary

Resistance of helical edges formed in a semiconductor heterostructure

Jukka I. Vaeyrynen et al.

PHYSICAL REVIEW B (2014)

添加到收藏夹

Article Multidisciplinary Sciences

Quantum spin Hall effect in two-dimensional transition metal dichalcogenides

Xiaofeng Qian et al.

SCIENCE (2014)

添加到收藏夹

Article Physics, Applied

Rashba Effect on the Structure of the Bi One-Bilayer Film: Fully Relativistic First-Principles Calculation

Hiroki Kotaka et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2013)

添加到收藏夹

Article Materials Science, Multidisciplinary

Interference of topologically protected edge states in silicene nanoribbons

Motohiko Ezawa et al.

PHYSICAL REVIEW B (2013)

添加到收藏夹

Article Physics, Applied

Computationally efficient self-consistent born approximation treatments of phonon scattering for coupled-mode space non-equilibrium Green's function

Aryan Afzalian

JOURNAL OF APPLIED PHYSICS (2011)

添加到收藏夹

Article Physics, Multidisciplinary

Colloquium: Topological insulators

M. Z. Hasan et al.

REVIEWS OF MODERN PHYSICS (2010)

添加到收藏夹

Article Multidisciplinary Sciences

Quantum spin hall insulator state in HgTe quantum wells

Markus Koenig et al.

SCIENCE (2007)

添加到收藏夹

Article Multidisciplinary Sciences

Half-metallic graphene nanoribbons

Young-Woo Son et al.

NATURE (2006)

添加到收藏夹

Article Materials Science, Multidisciplinary

Variationally optimized atomic orbitals for large-scale electronic structures

T Ozaki

PHYSICAL REVIEW B (2003)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.