期刊
MATERIALS
卷 16, 期 12, 页码 -出版社
MDPI
DOI: 10.3390/ma16124315
关键词
threshold switching; MOSFET; hyper-FET; sub-threshold slope; ovonic threshold switch; steep slope; logic circuit
Hyper-field effect transistors (hyper-FETs) are crucial in the development of low-power logic devices. New devices need to be developed to overcome the limitations of conventional logic devices. In this study, a novel threshold switch (TS) material is proposed and connected to a FET device, demonstrating improved performance with lower subthreshold swing values, high on/off current ratios, and high durability.
Hyper-field effect transistors (hyper-FETs) are crucial in the development of low-power logic devices. With the increasing significance of power consumption and energy efficiency, conventional logic devices can no longer achieve the required performance and low-power operation. Next-generation logic devices are designed based on complementary metal-oxide-semiconductor circuits, and the subthreshold swing of existing metal-oxide semiconductor field effect transistors (MOSFETs) cannot be reduced below 60 mV/dec at room temperature owing to the thermionic carrier injection mechanism in the source region. Therefore, new devices must be developed to overcome these limitations. In this study, we present a novel threshold switch (TS) material, which can be applied to logic devices by employing ovonic threshold switch (OTS) materials, failure control of insulator-metal transition materials, and structural optimization. The proposed TS material is connected to a FET device to evaluate its performance. The results demonstrate that commercial transistors connected in series with GeSeTe-based OTS devices exhibit significantly lower subthreshold swing values, high on/off current ratios, and high durability of up to 10(8).
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