期刊
MATERIALS
卷 16, 期 5, 页码 -出版社
MDPI
DOI: 10.3390/ma16052116
关键词
PZT energy harvesters; flexible materials; laser processing; photo-assisted chemical solution deposition; photocrystallization; perovskite oxides; wearable devices; orientation growth
High-quality, uniaxially oriented, and flexible PbZr0.52Ti0.48O3 (PZT) films were fabricated on flexible RbLaNb2O7/BaTiO3 (RLNO/BTO)-coated polyimide (PI) substrates using a photo-assisted chemical solution deposition (PCSD) process. The RLNO seed layer, grown only at 40 mJ center dot cm(-2) at 300 degrees C, played a crucial role in orienting the growth of the PZT film and suppressing micro-cracks. This is the first demonstration of PZT films crystallized directly on flexible substrates.
High-quality, uniaxially oriented, and flexible PbZr0.52Ti0.48O3 (PZT) films were fabricated on flexible RbLaNb2O7/BaTiO3 (RLNO/BTO)-coated polyimide (PI) substrates. All layers were fabricated by a photo-assisted chemical solution deposition (PCSD) process using KrF laser irradiation for photocrystallization of the printed precursors. The Dion-Jacobson perovskite RLNO thin films on flexible PI sheets were employed as seed layers for the uniaxially oriented growth of PZT films. To obtain the uniaxially oriented RLNO seed layer, a BTO nanoparticle-dispersion interlayer was fabricated to avoid PI substrate surface damage under excess photothermal heating, and the RLNO has been orientedly grown only at around 40 mJ center dot cm(-2) at 300 degrees C. The prepared RLNO seed layer on the BTO/PI substrate showed very high (010)-oriented growth with a very high Lotgering factor (F(010) = 1.0). By using the flexible (010)-oriented RLNO film on BTO/PI, PZT film crystal growth was possible via KrF laser irradiation of a sol-gel-derived precursor film at 50 mJ center dot cm(-2) at 300 degrees C. The obtained PZT film showed highly (001)-oriented growth on the flexible plastic substrates with F(001) = 0.92 without any micro-cracks. The RLNO was only uniaxial-oriented grown at the top part of the RLNO amorphous precursor layer. The oriented grown and amorphous phases of RLNO would have two important roles for this multilayered film formation: (1) triggering orientation growth of the PZT film at the top and (2) the stress relaxation of the underneath BTO layer to suppress the micro-crack formation. This is the first time that PZT films have been crystallized directly on flexible substrates. The combined processes of photocrystallization and chemical solution deposition are a cost-effective and highly on-demand process for the fabrication of flexible devices.
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