GaAs Nanowire Photodetectors Based on Au Nanoparticles Modification

A high-performance GaAs nanowire photodetector was fabricated based on the modification of Au nanoparticles (NPs). Au nanoparticles prepared by thermal evaporation were used to modify the defects on the surface of GaAs nanowires. Plasmons and Schottky barriers were also introduced on the surface of the GaAs nanowires, to enhance their light absorption and promote the separation of carriers inside the GaAs nanowires. The research results show that under the appropriate modification time, the dark current of GaAs nanowire photodetectors was reduced. In addition, photocurrent photodetectors increased from 2.39 x 10(-10) A to 1.26 x 10(-9) A. The responsivity of GaAs nanowire photodetectors correspondingly increased from 0.569 A center dot W-1 to 3.047 A center dot W-1. The reasons for the improvement of the photodetectors' performance after modification were analyzed through the energy band theory model. This work proposes a new method to improve the performance of GaAs nanowire photodetectors.

Automated summary

A high-performance GaAs nanowire photodetector was fabricated by modifying the surface defects with Au nanoparticles. Plasmons and Schottky barriers were introduced to enhance light absorption and carrier separation. The modified photodetectors showed reduced dark current and increased photocurrent and responsivity. The improvement in performance was analyzed using the energy band theory model. This work proposes a new method to enhance the performance of GaAs nanowire photodetectors.